MADRCC0006 MA-COM | Alldatasheet

Document overview

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Technical content

Features

  • High Speed CMOS Technology
  • Single Channel
  • Positive Voltage Control
  • Low Power Dissipation
  • Low Cost Plastic SOIC-8 Package
  • 100% Matte Tin Plating over Copper
  • Halogen-Free “Green” Mold Compound
  • 260°C Reflow Compatible
  • MADRCC0006 is RoHS* Compliant Version of SWD-109

Description

The MADRCC0006 is a single channel driver used to translate TTL control inputs into gate control voltages for GaAs FET microwave switches and attenuators. High speed analog CMOS technology is utilized to achieve low power dissipation at moderate to high speeds, encompassing most microwave switching applications. The output HIGH level is optionally 0 to +2.0V (relative to GND) to optimize the intermodulation products of the control devices at low frequencies.

Ordering Information

  1. Reference Application Note M513 for reel size information. 2. Die sales are available in waffle packs in increments of 100 pieces. Functional Schematic Pin Configuration3 Pin No. Function

1 Output A

2 GND

3 Vcc

4 C1, Logic

5 Vee

6 Vopt

7 GND

8 Output B

  • Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Ordering Information1 Part Number Package MADRCC0006 SOIC-8 MADRCC0006TR 1000 piece reel of SOIC-8 MADR-0009151-000DIE Die2 3. The bottom of the die should be isolated for part number MADR-009151-000DIE.

Single Driver for GaAs FET Switches and Attenuators Rev. V5 MADRCC0006, MADR-009151-000DIE Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Guaranteed Operating Ranges Symbol Parameter 4 Unit Min. Typ. Max. VCC Positive DC Supply Voltage V 4.5 5.0 5.5 VEE Negative DC Supply Voltage V -8.5 -5.0 -4.5 VOPT 5 Optional DC Output Supply Voltage V 0 1.0 2.0 VOPT-VEE Negative Supply Voltage Range V 4.5 6.5 11.0 VCC-VEE Positive to negative Supply Range V 9.0 10.0 14.0 TA Operating Ambient temperature °C -40 +25 +85 IOH DC Output Current - High mA — — -1.0 IOL DC Output Current - Low mA — — 1.0 Trise, Tfall Maximum Input Rise or Fall Time ns — — 500 4. All voltages are relative to GND. 5. V OPT is grounded for most applications. To improve the intermodulation performance and the 1 dB compression point of GaAs control devices at low frequencies, VOPT can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs control devices will approximate performance at 500 MHz. It should be noted that the control current is on the GaAs MMICs will increase when positive controls are applied. Symbol Parameter Test Conditions Units Min. Typ. Max. VIH Input High Voltage Guaranteed High Input Voltage V 2.0 — — VIL Input Low Voltage V — — 0.8 VOH Output High Voltage IOH = -1 mA VEE = Max V VOPT -0.1 — — VOL Output Low Voltage IOL = 1 mA VEE = Max V — — VEE +0.1 IIN Input Leakage Current VIN = VCC or GND VEE = Min µA — .01 10 ICC Quiescent Supply Current VCC = Max VOPT = Min or Max VEE = Min VIN = VCC or GND µA — — 100 Δ ICC Additional Supply Current, per TTL Input pin VCC= Max VIN = VCC -2.1V mA — — 1.0 Guaranteed Low Input Voltage DC Characteristics over Guaranteed Operating Range Truth Table Input Outputs C1 A B Logic “0” VEE VOPT Logic “1” VOPT VEE Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Silicon Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.

Single Driver for GaAs FET Switches and Attenuators Rev. V5 MADRCC0006, MADR-009151-000DIE Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Symbol Parameter -55 to +25°C <+85°C <+125°C Unit TPLH Propagation Delay 22 25 30 ns TPHL Propagation Delay 22 25 30 ns TTLH Output Rising Transition Time 9.0 9.0 9.0 ns TTHL Output Falling Transition Time 8.0 8.0 8.0 ns Tskew Delay Skew, Output A to Output B 4.0 4.0 4.0 ns CIN Input Capacitance 10 10 10 pF CPDC Power Dissipation Capacitance7 10 10 10 pF CPDE Power Dissipation Capacitance7 140 140 140 pF AC Characteristics Over Guaranteed Operating Range6 6. V CC = 4.5V, VOPT - VEE = min or max, VOPT = 0V, CL = 25 pF, Trise, Tfall = 6ns. These conditions represent the worst case for slow delays. 7. Total Power Dissipation is calculated by the following formula: PD = V CC 2fC PDC + (VOPT-VEE) 2fCPDE Switching Waveforms Absolute Maximum Ratings8,9,10 Symbol Parameter Min Max Unit VCC Positive DC Supply Voltage -0.5 7.0 V VEE Negative DC Supply Voltage -9.0 0.5 V VOPT Optional DC Output Supply Voltage -0.5 Vcc +0.5 V VOPT-VEE Output to Negative Supply Voltage Range -0.5 11.0 V VCC-VEE Positive to Negative Supply Voltage Range -0.5 14.0 V VI DC Input Voltage -0.5 VCC +0.5 V II DC Input Current -25 25 mA VO DC Output Voltage VEE – 0.5 VOPT +0.5 V PD

11 Power Dissipation in Still Air — 500 mW

VO DC Output Current -25 25 mA TSTG Storage Temperature -65 150 °C 8. All voltages are referenced to GND. All inputs and outputs incorporate latch-up protection structures. 9. Exceeding any one or combination of these limits may cause permanent damage to this device. 10. M/A-COM does not recommend sustained operation near these survivability limits. 11. Derate -7 mW/°C from 65°C to 85°C.

Single Driver for GaAs FET Switches and Attenuators Rev. V5 MADRCC0006, MADR-009151-000DIE Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Lead-Free, SOIC-8† † Reference Application Note M538 for lead-free solder reflow recommendations.

Single Driver for GaAs FET Switches and Attenuators Rev. V5 MADRCC0006, MADR-009151-000DIE Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Pad Configuration12,13 Die Size: 1080 x 1240 µm (nominal) 12. All X,Y dimensions are at bond pad center. 13. Die thickness is 9.5 mils. Pad No. X (µm) nominal Y (µm) nominal Pad Size (µm) 0 0 0 Lower left edge of die 1 138 1042 92 x 92 2 138 835.5 92 x 92 3 138 636.75 92 x 92 4 313.75 198 92 x 92 5 838.5 198 92 x 92 6 942 378 92 x 92 7 942 558 92 x 92 8 942 1042 92 x 92 9 1080 1240 Upper right edge of die Outline Drawing