MADP-064908-131000 MA-COM | Alldatasheet
Document overview
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Technical content
Features
♦ No Wire Bonds Required ♦ Rugged Silicon-Glass Construction ♦ Silicon Nitride Passivation ♦ Polymer Scratch Protection ♦ Ultra-Low Parasitic Capacitance and Inductance ♦ Higher RF C.W. Power Handling ♦ Better Performance than Packaged Devices Description and Applications This device is a silicon glass PIN diode chip fabricated with M/A-COM Tech Solutions patented HMIC process. This 80μm I-region length device features six silicon pedestals embedded in a low loss, low dispersion glass. The diodes are formed on the top of a ped- estal and connections to the backside of the device are facilitated by making the pedestal sidewalls elec- trically conductive. Selective backside metallization is ap- plied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. The vertical silicon diode topology provides for a highly efficient heat transfer medium. These surface mount devices are suitable for usage in higher (3W avg.) incident power switches. Small parasitic inductance and excellent RC constant make these devices ideal for absorptive SPST, re- flective SP2T switches, and attenuator circuits, where higher P1db and power handling values are required. Absolute Maximum Ratings1 @ TAMB = +25°C (unless otherwise specified) 1. Operation of this device above any one of these parameters may cause permanent damage. Parameter Absolute Maximum Forward Current 250mA Reverse Voltage –100V Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Junction Temperature +175°C C.W. Incident Power Mounting Temperature +300°C for 10 seconds +35dBm Inches Millimeters Min. Max. Min. Max. A 0.060 0.062 1.524 1.575 B 0.036 0.038 0.914 0.965 C 0.004 0.008 0.102 0.203 D 0.011 0.012 0.279 0.305 Dim Case Style - ODS-1310 1. Backside Metal: 0.1microns thick. 2. Shaded Areas Indicate Backside Ohmic Gold Contacts.
Visit www.macomtech.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaran- teed. PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Surmount TM PIN Chip RoHS Compliant Rev. V3 MADP-064908-131000 Unconnected Double Tee Electrical Specifications @ +25 °C, per Diode Junction Symbol Conditions Units Min. Typ. Max. CT -40V, 1MHz1 pF 0.05 0.07 CT -40V, 1GHz1,3 pF 0.04 0.06 RS 10mA, 1GHz2,3 Ω 5.0 VF 10mA V 0.83 1.00 VR -10μA V –70 –100 IR -70V μA –0.1 –10 TL +10mA /-6mA ns 200 θTH 1A /10mA °C/W 150 1. Total capacitance, C T, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar. 2. Series resistance R S is equivalent to the total diode resistance : Rs = Rj (Junction Resistance) + Rc (Ohmic Resistance) 3. Rs, C T, TL, θTH are measured on an HP4291A Impedance Analyzer with die mounted in a ceramic package with Sn 60/Pb 40 solder Equivalent Double Tee Equivalent Circuit Notes: 1. Ports 2 and 5 have a Connected Cathode-Anode Node. 2. Ports 1,3,4, and 6 Have a Singular, Un-Connected Node. 2 3 Top View
Visit www.macomtech.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaran- teed. PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Surmount TM PIN Chip RoHS Compliant Rev. V3 MADP-064908-131000 Unconnected Double Tee SP2T All Series Reflective Switch with +5V and TTL Logic Control ( 2-18 GHz ) HMIC Die SN7406, SN7416 TTL Open Collector Gate Driver ( X2 ) J3 J2 B3 Bias B2 Bias 22 pF 22 pF 22 pF 15 nH 15 nH +5V +5 V 22 pF +5V +5V 15 nH 3,6 100 Ω 100Ω J22 pF +1.8 V 22 pF RF Truth Table for Reflective SP2T using Singular Power Supply: +5V, + I Only RF State B2 Diode Bias B3 Diode Bias J1 – J2 Low Loss & J1– J3 Isolation +3.6V @ +14mA +0.5V @ 0mA J1 – J3 Low Loss & J1–J2 Isolation +0.5V @ 0mA + 3.6V @ + 14mA Notes: 1. Diode Forward Voltage Differential (ΔVf ) @ 15mA = 0.9V 2. Insertion Loss Diode Bias = (+ 5V – (2)* 0.9V – 1.8V ) / ( 100Ω ) = 14mA
Visit www.macomtech.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaran- teed. PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Surmount TM PIN Chip RoHS Compliant Rev. V3 MADP-064908-131000 Unconnected Double Tee SPST All Series Absorptive Switch with +5V and TTL Logic Control ( 2-18 GHz ) RF Truth Table for Absorptive SPST using +5V, –5V Power Supplies RF State TTL Value B1 Diode Bias J1 – J2 Low Loss 0 - 1.8V @ -20mA J1 – J2 Isolation 1 +2.7V @ + 20mA Notes: 1. Diode Forward Voltage Differential ( ΔVf ) @ 20mA = 0.9 V 2. Diode Rs @ 20mA = 3.5Ω 3. Insertion Loss Diode Bias = – 1.8 V @ -20mA from a Constant Current Source 4. Off Isolation Diode Back Bias Voltage through (2) Diodes = | – ( +2.7 V – 0 V ) | = | – 2.7 V |. 43Ω HMIC Die 22pF 15nH 1 2 3,4 22pF TTL DRIVER +5V -5V 22pF 15nH B1 Bias
Visit www.macomtech.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaran- teed. PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Surmount TM PIN Chip RoHS Compliant Rev. V3 MADP-064908-131000 Unconnected Double Tee SPST All Series Reflective Switch with +5V and TTL Logic Control (2–18 GHz) SN7406, SN7416 Open Collector Gate Driver HMIC Die 1 2 3,4 5 6 15 nH 22 pF J1 J2 B1 Bias +5V +5V 15 nH 22 pF 22 pF 1 k Ω 47 Ω RF Truth Table for Reflective SPST using Singular Power Supply: +5V, + I Only RF State TTL Value B1 Diode Bias J1 – J2 Low Loss 0 + 0.5V @ +20mA J1–J2 Isolation 1 +5.0V @ 0mA
Visit www.macomtech.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaran- teed. PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Surmount TM PIN Chip RoHS Compliant Rev. V3 MADP-064908-131000 Unconnected Double Tee MADP-064908 SPICE Model PinDiodeModel NLPINM1 Ffe=1.0 Af=1.0 Kf=0.0 Imax=1.0E+6 A/m^2 Fc=0.5 M=0.5 Vj=0.7 V Cj0=0.06 pF Rs=0.1 Ohm Tau=0.20 usec Cmin=0.05 pF Rr=20 K Ohm Wi=7.5 um Un=900 cm^2/V-sec Vi=0.0 V Is=1.0E-14 A wPmax=3.0 W wBv=80 V Equivalent per Diode Schematic Notes : Rs = 2 * Rvia + Rp Rp Cp Ls Rvia Rvia + _
Visit www.macomtech.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaran- teed. PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Surmount TM PIN Chip RoHS Compliant Rev. V3 MADP-064908-131000 Unconnected Double Tee Assembly Guidelines Handling All semiconductor chips should be handled with care to avoid damage or contaminat ion from perspiration and skin oils. The use of plastic tipped tweezers or va cuum pickups is strongly recommended for individual components. Bulk handling should insure that abrasion and mechanical shock are minimized. Bonding Attachment to a circuit board is made simple through the use of surface mount technology. Mounting pads are conveniently located on the bottom surface of these devices and are removed from the active junction locations. These devices are well suited for solder attachment onto hard and soft substrates. Conductive silver epoxy may also be used for lower Incident power applications (<1W Average Power). The epoxy should be approximately 1-2mils thick and cured at approximately 90°C to 150°C per the manufacturer’s schedule. When soldering these devices on to a hard substrate, hot gas die bonding is preferr ed. We recommend utilizing a vacuum tip and force of 60 to 100 grams be applied to the top surface of the device. Position the die so that its mounting pads are aligned with the circuit board m ounting pads and reflow the solder by heating the circuit trace near the mounting pad while applying 60 to 100 grams of force perpendicular to the top surface of the die. The solder connections to the pads must not be made one at a time. Doing so would create un-equal heat flow and thermal stress to the chip. Solder reflow should not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is tr ansparent, the edges of the mounting pads can be visually inspected through the die to ensure proper solder flow after attachment is complete. Typical solder re-flow profiles are provided in Application Note 538 “Surface Mounting Instructions“ located on the MA-COM website at www.macomtech.com
Ordering Information
MADP-064908-131000 Die in Gel Pack