MADP-042005-S MACOM | Alldatasheet

Document overview

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Technical content

Features

  • Surface Mount, 5 µm I-Region Length Device
  • No Wirebonds Required
  • Rugged Silicon-Glass Construction
  • Silicon Nitride Passivation
  • Polymer Scratch Protection
  • Low Parasitic Capacitance and Inductance
  • Higher Average and Peak Power Handling Description and Applications This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM’s patented HMIC TM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrica lly conductive. Selective backside metallization is applied producing a surface mount device. This Vertical Topology provides for Exceptional Heat Transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These packageless devices are suitable for usage in Moderate Incident Power ( 10 W C.W. ) and 50 W , 1 uS, 0.01 Duty Cycle, Peak Power, Series, Shunt, or Series-Shunt Switches. Smaller Parasitic Inductance, 0.4 nH, and Excellent RC Constant, make the devices ideal for Higher Frequency Switch Elements compared to their Plastic Device Counterparts. Absolute Maximum Ratings1 @ TA = +25 °C (unless otherwise specified) 1. Operation of this device abov e any one of these parameters may cause permanent damage. Parameter Absolute Maximum Part 042 305 042 405 042 505 042 905 Forward Current 250 mA Reverse Voltage l -80 V l Operating Temperature -55 °C to +125 °C Storage Temperature -55 °C to +150 °C Junction Temperature +175 °C C.W. Inci- dent Power (dBm) 40 44 43 35 Mounting Temperature +300 °C for 10 seconds Dim Inches Millimeters Min. Max. Min. Max. A 0.040 0.042 1.025 1.075 B 0.021 0.023 0.525 0.575 C 0.004 0.008 0.102 0.203 D 0.013 0.015 0.325 0.375 E 0.011 0.013 0.275 0.325 F 0.013 0.015 0.325 0.375 G 0.019 0.021 0.475 0.525 Case Style ODS-1306 1. Backside Metal: 0.1microns thick. 2. Shaded Areas Indicate Backside Ohmic Gold Contacts. 3. Both Devices have Same Out line Dimensions ( A to G ). A B C G D E F

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. MADP-042005 Series SURMOUNT TM 5 µm PIN Diodes—MADP-042305-130600, MADP-042405-130600, MADP-042505-130600, MADP-042905-130600 Electrical Specifications @ + 25 °C Parameter Symbol Conditions Min Typ Max Min Typ Max MADP-042305 MADP-042505 Capacitance CT - 10 V, 1 MHz 1 pF 0.14 0.22 0.28 0.40 Capacitance CT - 10 V, 1 GHz 1,3 pF 0.15 0.28 Capacitance CT - 40 V, 1 MHz 1 pF 0.13 0.22 0.27 0.40 Capacitance CT - 40 V, 1 GHz 1,3 pF 0.14 0.27 Resistance RS + 20 mA, 1 GHz 2,3 Ω 1.32 0.83 Forward Voltage VF + 10 mA V 0.87 1.00 0.84 1.00 Reverse Leakage Current IR | -80V | uA 10 10 Input Third Order Intercept Point IIP3 F 1= 1000MHz F2 = 1010MHz Input Power = +20dBm I bias = + 20 mA dBm 72 76 C.W. Thermal Resistance RθJL IH=0.5A, IL=10 mA ° C / W 145 115 Lifetime TL +10 mA / -6 mA ( 50 % - 90 % V ) nS 180 210 Units Resistance RS + 50 mA, 1 GHz 2,3 Ω 1.18 0.76 Parameter Symbol Conditions Min Typ Max Min Typ Max MADP-042405 MADP-042905 Capacitance CT - 10 V, 1 MHz 1 pF 0.61 0.75 0.06 0.18 Capacitance CT - 10 V, 1 GHz 1,3 pF 0.61 0.06 Capacitance CT - 40 V, 1 MHz 1 pF 0.57 0.75 0.06 0.18 Capacitance CT - 40 V, 1 GHz 1,3 pF 0.58 0.06 Resistance RS + 20 mA, 1 GHz 2,3 Ω 0.62 3.14 Forward Voltage VF + 10 mA V 0.82 1.00 0.93 1.00 Reverse Leakage Current IR | -80V | uA 10 10 Input Third Order Intercept Point IIP3 F 1= 1000MHz F2 = 1010MHz Input Power = +20dBm I bias = + 20 mA dBm 80 65 C.W. Thermal Resistance RθJL IH=0.5A, IL=10 mA ° C / W 100 185 Lifetime TL +10 mA / -6 mA ( 50 % - 90 % V ) nS 255 140 Units Resistance RS + 50 mA, 1 GHz 2,3 Ω 0.58 2.60 1. Total capacitance, C T, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar. 2. Series resistance R S is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance) 3. Rs and C T are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-1134 package with Sn 60/Pb 40 Solder 4. Steady-state R θJL measured with die mounted in an ODS-1134 package with Sn 60/Pb 40 Solder.

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. MADP-042005 Series SURMOUNT TM 5 µm PIN Diodes—MADP-042305-130600, MADP-042405-130600, MADP-042505-130600, MADP-042905-130600 Handling Procedures All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. Bulk handling should insure that abrasion and mechanical shock are minimized. Bonding Techniques Attachment to a circuit board is made simple throug h the use of surface mount technology. Mounting pads are conveniently located on the bottom surface of t hese devices and are removed from the active junction locations. These devices are well suited for solder attachment onto hard and soft substrates. The use of 80 Au / 20 Sn @ ~ + 280 °C or Sn 60 / Pb 40 ~ + 185 °C solder is recommended. Conductive silver epoxy for die attachment ~ + 150 °C may also be used for lower Incident power ( < 1 W Average Power ) applications. When soldering these devices to a ha rd substrate, hot gas die bonding is preferred. We re-commend utilizing a vacuum tip and force of 60 to100 grams applied normal to the top surface of the devic e. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads and reflow the solder by heating the circuit trace near the mounting pad while applying 60 to 100 grams of force perpendicular to the top surface of the die. The solder joint must Not be m ade one at a time, creating un-equal heat flow and thermal stress. Solder reflow should Not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads closest to eac h other can be visually inspected through the die after attach is completed. A typical profile for a Sn 60/ Pb 40 Soldering pr ocess is provided in Application Note, “ M538 ” , “ Surface Mounting Instructions “ on the MA-COM website www.macom.com

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. MADP-042005 Series SURMOUNT TM 5 µm PIN Diodes—MADP-042305-130600, MADP-042405-130600, MADP-042505-130600, MADP-042905-130600 MADP-042005 Series Typical Performance Curves @ +25 °C Ct @ 1GHz 0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0 5 10 15 20 25 30 35 40 Bias (V) Ct (pF) 042905 042305 042505 042405 Rs @ 1GHz 0.100 1.000 10.000 0.001 0.010 0.100 Bias (A) Rs (ohm) 042905 042305 042505 042405 Rs vs F Rs vs F Ct vs V Rs vs I Ct vs F Ct vs F Ct @ 10V 0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.00E+ 2.00E+ 4.00E+ 6.00E+ 8.00E+ 1.00E+ 1.20E+ 1.40E+ 1.60E+ 1.80E+ Freq (Hz) Ct (pF) 042905 042305 042505 042405 Ct @ 40V 0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.00E+ 2.00E+ 4.00E+ 6.00E+ 8.00E+ 1.00E+ 1.20E+ 1.40E+ 1.60E+ 1.80E+ Freq (Hz) Ct (pF) 042905 042305 042505 042405 Rs @ 10mA 0.00E+00 5.00E-01 1.00E+00 1.50E+00 2.00E+00 2.50E+00 3.00E+00 3.50E+00 4.00E+00 4.50E+00 0.00E+ 2.00E+ 4.00E+ 6.00E+ 8.00E+ 1.00E+ 1.20E+ 1.40E+ 1.60E+ 1.80E+ Freq (Hz) Rs (ohm) 042905 042305 042505 042405 Rs @ 20mA 0.00E+00 5.00E-01 1.00E+00 1.50E+00 2.00E+00 2.50E+00 3.00E+00 3.50E+00 4.00E+00 0.00E+ 2.00E+ 4.00E+ 6.00E+ 8.00E+ 1.00E+ 1.20E+ 1.40E+ 1.60E+ 1.80E+ Freq (Hz) Rs (ohm) 042905 042305 042505 042405