MADP-011029-14150T_15 MA-COM | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • 3 Terminal LPF Broadband Shunt Structure
  • 50 MHz - 12 GHz Broadband Frequency
  • >100 W Peak Power Handling
  • < 0.1 dB Shunt Insertion Loss
  • > 25 dB Shunt Isolation
  • < 20°C/W Thermal Resistance
  • Lead-Free 1.5 x 1.2 mm 6-lead DFN Package
  • RoHS* Compliant and 260oC Reflow

Description

The MADP-011029 is a lead-free 1.5 x 1.2 mm DFN surface mount plastic packaged that provides both low and high signal frequency operation from 50 MHz to 12 GHz. The higher breakdown voltage and lower thermal resistance of the PIN diode provides peak power handling in excess of 100 W. This device is ideally suitable for usage in higher incident power switches, phase shifters, attenuators, and limiter microwave circuits over a broad frequency where higher performance surface mount diode assemblies are required. Ordering Information1,2 Part Number Package MADP-011029-14150T 3000 piece reel MADP-011029-000SMB Sample board * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Functional Schematic Pin Configuration3 Pin No. Pin Name Description

1 RF IN RF Input

2 GND Ground

3 GND Ground

4 GND Ground

5 GND Ground

6 RF OUT RF Output

7 Paddle 4 Ground

  1. M/A-COM Technology Solutions recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC, and thermal ground. 1. Reference Application Note M513 for reel size information. 2. All RF Sample boards include 5 loose parts.

50 MHz - 12 GHz

Rev. V1 MADP-011029-14150T 2 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Electrical Specifications: TA = +25°C Absolute Maximum Ratings9,10 Parameter Absolute Maximum D.C. Forward Voltage @ +250 mA 1.2 V D.C. Forward Current 250 mA D.C. Reverse Voltage |-400V| Junction Temperature11 +175°C Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C Re-flow Temperature +260°C for 360 seconds 9. Exceeding any one or combination of these limits may cause permanent damage to this device. 10. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 11. Operating at nominal conditions with T J ≤ +140°C will ensure MTTF > 1 x 10E6 hours. Parameter Test Conditions Units Min. Typ. Max. Reverse Leakage Current -200 V D.C. ηA — |- 20| |-1000| Total Capacitance5 -50 V @ 1 GHz pF — 0.31 0.40 Series Resistance 6 +10 mA @ 1 GHz Ω — 1.5 1.9 Parallel Resistance6 -Vdc = -40 V, @ 100 MHz KΩ — 1000 — Minority Carrier Lifetime +If = 10 mA / -Ir = -6 mA (50% Control Voltage, 90% Output Voltage) µS — 1.0 2.0 C.W. Thermal Resistance ( Infinite Heat Sink at Thermal Ground Plane) IHigh = 4 A, Ilow = 10 mA @ 10 kHz ºC/W — 20 — Power Dissipation7,8 ( Infinite Heat Sink at Thermal Ground Plane) +If = 50 mA @ 1 GHz W — 7.5 — Insertion Loss F = 1 GHz, -Vdc = -10V dB -0.1 Isolation F = 1 GHz, +Ibias = +10 mA dB -25 -23 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 2 devices. 5. Ct ( Total Capacitance ) = CJ ( Junction Capac itance ) + Cp ( Parasitic Package Capacitance ). 6. Rs and Rp are measured on an HP4291A Impedance Analyzer. 7. De-rate power dissipation linearly by -50 mW /ºC to 0 W @ +175ºC: Pd (T) = Pd (+25ºC) - ∆P = Pd (+25º) - (50 mV/ºC) (∆T). 8. PD = ∆Tj / Θ or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current.

Rev. V1 MADP-011029-14150T 3 3 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 500 - 5000 MHz Parts List13 PCB Layout PCB Schematic 12. R1 is not needed when using the recommended ferrite FB1. 13. Max DC voltage with recommended components not to exceed 100 V. Part Value Case Style C1 62 pF 0402 C2, C3 100 pF 0402 FB1 470 Ω @ 1 GHz 0402 R1 150 Ω 0402 L1 82 nH 0402 Devices may be soldered using standard Pb60/Sn40, or RoHS compliant solders. Leads are plated NiPdAuAg to ensure an optimum solderable connection. For recommended Sn/Pb and RoHS soldering profile See Application Note M538 on the MACOM website. Assembly Recommendations Cleanliness and Storage These devices should be handled and stored in a clean environment. Ends of the device are NiPdAuAg plated for greater solderability. Exposure to high humidity (>80%) for extended periods may cause the surface to oxidize. Caution should be taken when storing devices for long periods. General Handling Device can be handled with tweezers or vacuum pickups and are suitable for use with automatic pick-and-place equipment.

Rev. V1 MADP-011029-14150T 4 4 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Parallel Resistance vs. Reverse Voltage Typical 1 GHz Parametric Curves Series Resistance vs. Forward Current Capacitance vs. Reverse Voltage 0.1 100 1000 Forward Bias (A) 0.40 0.45 0.50 0.55 0.60 0 1 02 03 04 0 Reverse Bias (V) 10000 100000 1000000 0 1 02 03 04 0 Reverse Bias (V)

Rev. V1 MADP-011029-14150T 5 5 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Typical RF Small Signal Performance Curves Return Loss Insertion Loss Isolation -0.25 -0.20 -0.15 -0.10 -0.05 0.00 02468 0 V 10 V 50 V Frequency (GHz) -50 -40 -30 -20 -10 02468 0 V 10 V 50 V Frequency (GHz) -35 -30 -25 -20 -15 -10 02468 10 mA 25 mA 50 mA Frequency (GHz)

Rev. V1 MADP-011029-14150T 6 6 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Lead-Free 1.5 x 1.2 mm 6-Lead DFN† NOTES: 1. REFERENCE JEDEC MO-153-AB FOR ADDITIONAL DIMENSIONAL AND TOLERANCE INFORMATION. 2. ALL DIMENSIONS SHOWN AS INCHES/MM. † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is NiPdAuAg

Rev. V1 MADP-011029-14150T 7 7 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Applications Section Schematic of High Power SP2T Shunt Switch using MADP-011029-14150T PIN Diodes F = Octave Bandwidth from 1 to 12 GHz Pinc = +40 dBm CW Pinc = +50 dBm, 10 µS PW, 1 % Duty L = 11.807 / ( εeff ½ * F * 4 ) inches, θ = β * L = ( 2 π / λ ) * L = 90 ° Frequency is in GHz, εeff is Effective Dielectric Constant of Transmission Line Medium RF State B1 Bias B2 Bias J0-J1 Low Loss & J0-J2 Isolation -50 V @ 0 mA +1 V @ +20 mA J0-J2 Low Loss & J0-J1 Isolation +1 V @ +20 mA -50 V @ 0 mA

Rev. V1 MADP-011029-14150T 8 8 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Applications Section Schematic of 3 Stage Limiter using MADP-011029-14150T F = 1000 - 8,000 MHz Pinc = +47 dBm CW Pinc = +50 dBm, 10 µS P.W., 1 % Duty Part PN Case Style Description Quantity D1 MADP-011029-14150T ODS-1415 Input PIN Diode 1 D2 MADP-011023-14150T ODS-1415 2nd Stage PIN Diode 1 D3 MADP-011023-14150T ODS-1415 3rd Stage PIN Diode 1 L1 33 nH 0402 RF Choke / DC Return 1 C1 27 pF 0402 DC Block 1 C2 27 pF 0402 DC Block 1

Rev. V1 MADP-011029-14150T 9 9 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Microwave Model of MADP-011027-14150T Parameter Value Cpackage 8.0E-14 F Lbond=Ls 4.0E-10 H Rs 0.9 Ω Rp 5E+5 Ω 1 2 Cpkg/2 Cj Rj Ls Ls Cpkg/2 2 1 Rj = Rs ( Forward Bias Current ) Rj = Rp ( Reverse Bias Voltage )