MA4AGP907 MA-COM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
♦ Low Series Resistance ♦ Ultra Low Capacitance ♦ Millimeter Wave Switching & Cutoff Frequency ♦ 2 Nanosecond Switching Speed ♦ Can be Driven by a Buffered TTL ♦ Silicon Nitride Passivation ♦ Polyimide Scratch Protection ♦ RoHS Compliant
Description
M/A-COM's MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly.
Applications
The ultra low capacitance of the MA4AGP907 and MA4AGFCP910 allows their us e through millimeter frequencies for RF switches and switched phase shifter applications. The diodes are designed for use in pulsed or CW applications, where single digit nS switching speed is required. For surface mount assembly, the low capacitance of these switches make them ideal for use in microwave multi-throw switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR. DIM INCHES MM MIN. MAX. MIN. MAX. A 0.026 0.027 0.6604 0.6858 B 0.0135 0.0145 0.3429 0.3683 C 0.0065 0.0075 0.1651 0.1905 D 0.0043 0.0053 0.1092 0.1346 E 0.0068 0.0073 0.1727 0.1854 F 0.0182 0.0192 0.4623 0.4877 Parameter Absolute Maximum Reverse Voltage MA4AGP907 -50V MA4AGFCP910 -75V Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Junction Temperature +175°C Dissipated Power ( RF & DC ) 50mW Mounting Temperature +280°C for 10 seconds C.W. Incident Power +23 dBm Absolute Maximum Ratings TAMB = +25°C (unless otherwise specified) 1. Gold Pads 14µM thick. 2. Yellow areas indicate ohmic gold mounting pads. 3. Dimensions A thru F are identical for both devices Notes: Chip Dimensions MA4AGP907 and MA4AGFCP910
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. AlGaAs Flip Chip PIN Diodes RoHS Compliant Rev. V4 MA4AGP907 MA4AGFCP910 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Electrical Specifications @ TAMB = +25°C Parameter Symbol Conditions Units MA4AGP907 MA4AGFCP910 Typ. Max. Typ. Max. Total Capacitance CT MA4AGP907 -5V,1MHz MA4AGFCP910 -10V,1MHz pF 0.025 0.030 0.018 0.021 Total Capacitance 1 CT -5V, 10GHz pF 0.020 —— 0.018 0.021 Series Resistance RS +10mA, 1MHz Ω 5.2 7.0 —— —— Series Resistance 2 RS +10mA, 10GHz Ω 4.2 —— 5.2 6.0 Forward Voltage VF +10mA V 1.33 1.45 1.33 1.45 Reverse Leakage Current 3 IR MA4AGP907 VR = -50V MA4AGFCP910 VR = -75V μA —— 10 —— 10 Switching Speed 4 TRISE TFALL 10GHz nS 2 —— 2 —— Carrier Lifetime TL IF = 10mA / IREV = 6mA nS —— —— 4 —— Notes: 1) Capacitance is determined by measuring t he isolation of a single series diode in a 50Ω transmission line at 10GHz. 2) Series resistance is determined by measuring t he insertion loss of a single series diode in a 50Ω transmission line at 10GHz. 3) The max rated V R( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10μA 4) Switching speed is measured between 10% and 90% or 90% to 10% RF voltage for a single series mounted diode. Driver delay is not included.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. AlGaAs Flip Chip PIN Diodes RoHS Compliant Rev. V4 MA4AGP907 MA4AGFCP910 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical RF Performance @ TAMB = +25°C -0.8 -0.6 -0.4 -0.2 0.0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) Insertion Loss (dB) I. Loss @5mA I. Loss @15mA I . Loss @50m A MA4AGFCP910 Typical Insertion Loss vs. Frequency -0.8 -0.6 -0.4 -0.2 0.0 2 1 01 82 63 44 25 0 Frequency (GHz) Loss (dB) 5mA 10mA 15mA 5 mA10 mA15 mA MA4AGP907 Typical Insertion Loss vs. Frequency Isertion Loss (dB) Isertion Loss (dB) Frequency (GHz) Frequency (GHz)
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. AlGaAs Flip Chip PIN Diodes RoHS Compliant Rev. V4 MA4AGP907 MA4AGFCP910 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Frequency (Hz) -40.0 -38.0 -36.0 -34.0 -32.0 -30.0 -28.0 -26.0 -24.0 -22.0 -20.0 Frequency (GHz) R eturn Loss (dB ) R. Loss @5mA R. Loss @15mA R. Loss @50mA MA4AGFCP910 Typical Return Loss vs. Frequency ( Either Port Direction ) -35 -30 -25 -20 -15 -10 2 1 01 82 63 44 25 0 Frequency (GHz) Return Loss (dB) 5mA 10mA 15mA 5 mA10 mA15 mA MA4AGP907 Typical return Loss vs. Frequency ( Either Port ) Typical RF Performance @ TAMB = +25°C Frequency (GHz) Return Loss (dB)
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. AlGaAs Flip Chip PIN Diodes RoHS Compliant Rev. V4 MA4AGP907 MA4AGFCP910 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. -35.0 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 Frequency (GHz) Isolation (dB) Isolation @ -10V Isolation @ 0V Isolation @ -1V MA4AGFCP910 Typical Isolation vs Frequency -35 -30 -25 -20 -15 -10 2 1 01 82 63 44 25 0 Frequency (GHz) Isolation (dB) 0V 5V MA4AGP907 Typical Isolation vs. Frequency Typical RF Performance @ TAMB = +25°C Frequency (GHz) Isolation Loss (dB)
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. AlGaAs Flip Chip PIN Diodes RoHS Compliant Rev. V4 MA4AGP907 MA4AGFCP910 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Device Installation Guidelines Cleanliness These devices should be handled in a clean environment. The chips are resistant to solvents and may cleaned using approved industry standard practices. Static Sensitivity Aluminum Gallium Arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. These devices are rated Class 0, ( 0-199V ) per HBM MIL-STD-883, method 3015.7 [C = 100pF ±10%, R = 1.5kW ±1%]. Even though tested die pass 50V ESD, they must be handled in a static-free environment. General Handling The devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Die can be handled with plastic tweezers or picked and placed with a #27 tip vacuum pencil. Assembly Requirements using Electrically Conductive Silver Epoxy and Solder These chips are designed to be inserted onto hard or soft substrates with the junction side down. They should be mounted onto silk-screened circuits using electrically conductive silver epoxy, approximately 1-2 mils in thickness and cured at approximately 90°C to 150°C per manufacturer’s schedule. For extended cure times, > 30 minutes, temperatures must be below 200°C. Eutectic Die Attached Tin rich solders ( >30% Sn by weight ) are not recommended as they will scavenge the gold on the contact Pads exposing the tungsten metallization beneath and creating a poor solder connection. Indalloy or 80/20, Au/Sn type solders are acceptable. Maximum soldering temperature must be kept below 280°C for less than 10 seconds. Note: The MA4AGSBP907 which is a solder bumped version of the MA4AGP907, is also available. The datasheet can be viewed on the M/A-COM website at: http://www.macom.com/DataSheets/MA4AGSBP907.pdf 0.012” (2) PL 0.008” (2) PL 0.013” Circuit Pad Layout Part Number Packaging MA4AGP907 Gel Pack MA4AGFCP910 Gel Pack MADP-001907-13050P Pocket Tape MADP-000910-13050P Pocket Tape Part Number Packaging