MA4AGFCP910 MACOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
- Lower Series Resistance, 5.2Ω
- Ultra Low Capacitance, 18 f F
- High Switching Cutoff Frequency, 50 GHz
- 3 Nanosecond Switching Speed
- Driven by Standard TTL
- Silicon Nitride Passivation
- Polyimide Scratch Protection
Description
M/A-COM's MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps) and 3nS switching characteristics. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling. AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz MA4AGFCP910 Rev 2.0 Top View Shown Is With Diode Junction Up Cathode Package Outline Electrical Specifications at TA = 25 °C Parameters and Test Conditions Symbol Units 1 MHz & DC Specifications
10 GHz Reference
Data1,2 Min Typ. Max Min Typ. Max. Total Capacitance at –5 V Ct pF 0.018 0.021 0.018 .021 RF Resistance at +10 mA Rs Ω 5.2 6.0 Forward Voltage at +10 mA Vf Volts 1.33 1.4 Reverse Breakdown Voltage at 10 uA3 Vb Volts 50 75 Minority Carrier Lifetime τL nS 4.0 Notes: 1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz. 2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line at 10 GHz. 3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.
Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 AlGaAs Flip-Chip PIN Diode MA4AGFCP910 Rev 2.0 Typical RF Performance MA4AGFCP910 Typical Insertion Loss vs. Frequency -0.8 -0.6 -0.4 -0.2 0.0 2 101 82 63 4 425 Frequency (GHz) Loss (dB) 5mA 10mA 15mA 5 mA10 mA15 mA
Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 AlGaAs Flip-Chip PIN Diode MA4AGFCP910 Rev 2.0 Typical RF Performance MA4AGFCP910 Typical Return Loss vs. Frequency ( Either Port Direction ) -35 -30 -25 -20 -15 -10 2 101 82 6 344 25 Frequency (GHz) Return Loss (dB) 5mA 10mA 15mA 5 mA10 mA15 mA
Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 AlGaAs Flip-Chip PIN Diode MA4AGFCP910 Rev 2.0 Typical RF Performance MA4AGFCP910 Typical Isolation vs Frequency -35 -30 -25 -20 -15 -10 2 10 182 6 344 2 Frequency (GHz) Isolation (dB) 0V 5V
Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 AlGaAs Flip-Chip PIN Diodes MA4AGFCP910 Rev 2.0
Applications
The 20 fF capacitance of the MA4AGFCP910 allows use through m mwave switch and switched phase shifter applications. This diode is designed for use in pulsed or CW applications, where single digit nS switching speed is required. For surface m ount assembly, the low capacitance of the MA4AGFCP910 m akes it ideal for use in m icrowave multithrow switch assem blies, where the seri es capacitance of each “off” port adversely loads the input port and affects VSWR. Absolute Maximum Ratings @ 25 ˚C Parameter Maximum Ratings Operating Temperature -65 °C to +125 °C Storage Temperature -65 °C to +150 °C Junction Temperature +175 °C Dissipated RF & DC Power 50 mW RF C.W. Incident Power +23 dBm C.W. Mounting Temperature +300 °C for 10 seconds Note: Exceeding these limits may cause permanent damage. Device Installation Procedures The following guidelines should be observed to avoid damaging GaAs Flip-Chips. Cleanliness These devices should be handled in a clean environment. Do Not attempt to Clean Die After installation. Static Sensitivity Gallium arsenide PIN diodes are ESD sensitive and can be dam aged by static electricity. Proper ESD techniques should be used when handling these devices. These devices are rated Class 0, ( 0-199V ) per HBM MIL-STD-883, method 3015.7 [C = 100pF ±10%, R = 1.5kW ±1%]. Even though tested die pass 50V ESD, they must be handled in a static-free environment. General Handling These devi ces have a pol ymer l ayer whi ch provi des scrat ch prot ection for the junction area and t he anode ai r bri dge. Di e can be handled with plastic tweezers or picked and placed with a #27 tip vacuum pencil. Assembly Requirements using Electrically Conductive Ag Epoxy and Solder These chips are designed to be inserted onto hard or soft substrates with the junction side down. They should be mounted onto silk- screened circuits using Electrically Conductive Ag Epoxy, approximately 1-2 mils in thickness and cured at approximately 90°C to 150 °C per manufacturer’s schedule. For extended cure times > 30 minutes, temperatures must be below 200 °C. Sn Rich Solders are not recommended due to the Tungsten Metallization scheme beneath the gold contacts. Indalloy or 80 Au/20 Sn Solders are acceptable. Maximum soldering temperature must be < 300 °C for < 10 sec.
Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 AlGaAs Flip-Chip PIN Diodes MA4AGFCP910 Rev 2.0
Ordering Information
MADP-000910-13050T Tape/Reel Circuit Mounting Dimensions ( Inches ) 0.013 0.012 (2) PL 0.008 (2) PL