MADP-000135-01340W

MA4P161-134 MA-COM | Alldatasheet

Document overview

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Technical content

Features

♦ Switch & Attenuator Die ♦ Extensive Selection of I-Region Lengths ♦ Hermetic ♦ Glass Passivated CERMACHIP® ♦ Oxide Passivated Planar Chips ♦ Voltage Ratings to 3000V ♦ Fast Switching Speed ♦ Low Loss ♦ High Isolation ♦ RoHS Compliant Absolute Maximum Ratings1 TAMB = +25°C (Unless otherwise specified)

Description

M/A-COM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN se ries of devices cover a broad spectrum of performanc e requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series re sistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable R s vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip’s construction is M/A-COM’s, time proven, hard glass, CERMACHIP ® . The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These CERMACHIP ® diodes are available in a wide variety of voltage ratings, up to 3,000 volts and are capable of controlling kilowatts of power. Many of M/A-COM’s silicon PIN diode chips are also available in several different package styles. Please consult the “Packaged PIN Diode Datasheet” for case style availability and specifications. The datasheet is located on the M/A-COM website at : www.macomtech.com/DataSheets/packagedpindiodes.pdf Parameter Absolute Maximum Value Forward Current (IF) Per P/N Rs vs. I Graph Reverse Voltage (VR) Per Specification Table Power Dissipation (W) (175°C –Tplate°C ) / Theta Operating Temperature -55°C to +175°C Storage Temperature -55°C to +200°C Junction Temperature +175°C Mounting Temperature +320°C for 10 seconds Anode Full Area Cathode 1. Exceeding these limits may cause permanent damage to the chip

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Low Capacitance PIN Specification @ TAMB = +25°C Part Number Max. Rev. Volt.3 VR <10 µA VDC Max. Cap.

1 MHz

Cj @ -10 V pF Max. Series Res.

500 MHz

RS @ 10 mA Ω Nominal Characteristics Carrier Lifetime1 TL ηS Reverse Recovery Time 2 TRR ηS I Region Length μm Theta °C/W Anode Dia. ± 0.5 mils Chip Size ± 2 mils Chip Thk. ± 1 mils MA4P161-134 100 0.10 1.50 150 15 13 65 3.5 13X13 6 MA4P203-134 100 0.15 1.50 150 25 13 75 3.1 13X13 6 MADP-000165-01340W 200 0.06 2.50 200 20 19 150 1.8 13X13 10 MADP-000135-01340W 200 0.15 1.20 440 44 19 35 3.1 13x13 10 Notes: 1. Nominal carrier life time,T L , specified at IF = + 10mA , IREV = - 6mA. 2. Nominal reverse recovery time specified at I F = + 20mA , IREV = - 200mA. 3. V R ( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10µA. Attenuator PIN Specification @ TAMB = +25°C Part Number Max. Rev. Volt.2 VR <10 µA VDC Max. Cap. 1MHz Cj @ -100 V pF Max. Series Res. 100MHz RS @ 10 mA Ω Nominal Characteristics Carrier Lifetime1 TL μS Series Res. 100MHz RS @ 1 mA Ω Series Res. 100MHz RS @ 10 μA Ω I Region Length mils Theta °C/W Anode Dia. ± 0.5 mils Chip Size ± 2 mils Chip Thk. ± 1 mils MA47416-132 200 0.15 6 2 30 2000 4 30 7.5 X7.53 19X19 7 MA47418-134 200 0.15 3 1 15 500 2 25 7.5 13X13 7 Notes: 1. Nominal carrier life time,T L, specified at IF = + 10mA, IREV = - 6mA. 2. V R ( Reverse Voltage ) is sourced and the resultant reverse leakage current, IR, is measured to be <10μA. 3. Anode top contact is square.

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. CERMACHIP® PIN Chips Specification @ TAMB = +25°C Part Number Max. Rev. Volt.5 VR < 10 µA VDC Unless otherwise noted Max. Cap.

CJ @ -100 V pF Unless otherwise noted Max. Series Res.

100 MHz

RS @ 100 mA Ω Nominal Characteristics Carrier Lifetime4 μS I Region Length μm Theta °C/W Anode Dia. ± 0.5 mil Chip size ± 2 mils Chip Thk. ± 1 mil MA4P504-132 500 0.20 0.60 1 50 15 6.8 20X20 12.0 MA4P505-131 500 0.35 0.45 2 50 14 13.0 27X27 11.0 MA4P506-131 500 0.70 0.30 3 50 11 15.8 27X27 12.0 MA4P604-131 1000 0.30 1.00 3 90 10 17.0 27X27 13.5 MA4P606-131 1000 0.60 0.70 4 90 8 21.0 32X32 14.0 MA4P607-212 1000 1.30 0.40 5 127 4 37.0 62X62 18.5 MA4PK2000-2231 2000 2.40 0.20 @ 500 mA3 10 230 2 72.0 111X111 21.0 MADP-000488-13740W 900 0.16 @ 50V 1.6 @ 50 mA 4 140 45 12.2 23X23 13.5 Notes: 1. Upon completion of installation into a circuit, the chip must be covered with a dielectric conformal coating such as SYLGARD 539® to prevent voltage arcing. 2. Test Frequency = 500 MHz. 3. Test Frequency = 4 MHz. 4. Nominal carrier lifetime, T L, specified at IF = + 10 mA , IREV = - 6 mA. 5. Minimum specified V R (Reverse Voltage) is sourced and the resultant reverse leakage current, IREV, is measured to be < 10 μA. Anode

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Typical Series Resistance vs. Forward Current Performance

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MA4PK2000 & MA4PK3000 (2kV & 3kV) Chips

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Die Handling and Mounting Information Handling: All semiconductor chips should be handled with care to avoid damage or contamination from perspiration, salts, and skin oils. The use of plastic tipped tweezers or vacuum pickup is strongly recommended for the handling and placing of individual components. Bulk handling should ensure that abrasion and mechanical shock are minimized. Die Attach Surface: Die can be mounted with an 80Au/Sn20, eutectic solder preform, RoHS compliant solders or electrically conductive silver epoxy. The metal RF and D.C. ground plane mounting surface must be free of contamination and should have a surface flatness of < ±0.002”. Eutectic Die Attachment Using Hot Gas Die Bonder : A work surface temperature of 255 oC is recommended. When hot forming gas (95%N/5%H) is applied, the work area temperature should be approximately 290oC. The chip should not be exposed to temperatures greater than 320 oC for more than 10 seconds. Eutectic Die Attachment Using Reflow Oven : Refer to pages 5-7 of Application Note M538 “Surface Mounting Instructions” at www.macom.com for recommended time-temperature profile. Electrically Conductive Epoxy Die Attachment: A controlled amount of electrically conductive, silver epoxy, approximately 1–2 mils in thickness, should be used to minimize ohmic and thermal resistance. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure full area coverage. Cure conductive epoxy per manufacturer’s schedule. Typically 150°C for 1 hour. Wire and Ribbon Bonding: The die anode bond pads have a Ti-Pt-Au metallization scheme, with a final gold thickness of 1.0 micron. Thermo-compression or thermo-sonic wedge bonding of either gold wire or ribbon is recommended. A bonder heat stage temperature setting of 200 oC, tool tip temperature of 150°C and a force of 18 to 50 grams is suggested. Ultrasonic energy may also be used but should be adjusted to the minimum amplitude required to achieve an acceptable bond. Excessive energy may cause the anode metallization to separate from the chip. Automatic ball or wedge bonding may also be used. For more detailed handling and assembly instructions, see Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” at www.macom.com.