MAD1106_05 MICROSEMI | Alldatasheet

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Steering Diode TVS Array™ WWW.Microsemi .COM SCOTTSDALE DIVISION MAD1106 and MAD1106e3 MAD1106, e3 DESCRIPTION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-pin package for use as steering diodes protecting up to eight I/O ports from negative ESD, EFT, or surge by directing them to ground (pin 14)*. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high- density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. They are available with ei ther Tin-Lead plating terminations or as RoHS Compliant with annealed matte-Tin finish by adding an “e3” suffix to the part number. *See MMAD1105(e3) for directing po sitive transients to positive side of the power supply line. Top Viewing Pin Layout IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Microsemi Scottsdale Division Page 1 FEATURES APPLICATIONS / BENEFITS

  • 8 Diode Array
  • Molded 14-Pin Dual-In-Line Package
  • UL 94V-0 Flammability Classification
  • Low Capacitance 1.5 pF per diode
  • Switching speeds less than 5 ns
  • RoHS Compliant devices available by adding “e3” suffix
  • IEC 61000-4 compatible 61000-4-2 (ESD): Air 15kV, contact – 8 kV 61000-4-4 (EFT): 40A – 5/50 ns 61000-4-5 (surge): 12A, 8/20 µs
  • Low capacitance steering diode protection for high frequency data lines
  • RS-232 & RS-422 Interface Networks
  • Ethernet: 10 Base T
  • Computer I / O Ports
  • LAN
  • Switching Core Drivers MAXIMUM RATINGS MECHANICAL AND PACKAGING
  • Operating Temperatur e: -55°C to +150°C
  • Storage Temperature: -55°C to +150°C
  • Forward Surge Current: 2 Amps (8.3 ms)

12 Amps (8/20 µs)

  • Continuous Forward Current: 400 mA (one diode)
  • Power Dissipation (P D): 1500 mW (total)
  • Solder temperatures: 260°C for 10 s (maximum)
  • CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 flammability classification
  • TERMINALS: Tin-Lead or RoHS Compliant annealed matte-Tin plating solderable per MIL-STD- 750 method 2026
  • MARKING: MSC logo, MAD1106 or MAD1106e3 and date code. Pin #1 is to the left of the dot or indent on top of package.
  • WEIGHT: 0.997 grams (approximate)
  • Carrier tubes: 25 pcs (Standard) ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified BREAKDOWN VOLTAGE VBR @ IBR =100µA V WORKING PEAK REVERSE VOLTAGE VRWM V LEAKAGE CURRENT IR TA = 25°C µA LEAKAGE CURRENT IR TA = 150°C µA CAPACITANCE C @ 0 V pF REVERSE RECOVERY TIME trr ns FORWARD VOLTAGE VF IF = 10 mA V FORWARD VOLTAGE VF IF = 100 mA V PART NUMBER MIN MAX MAX @VR MAX @VR TYP MAX MAX MAX MAD1106 Copyright © 2005 6-28-2005 REV L 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Steering Diode TVS Array™ WWW.Microsemi .COM SCOTTSDALE DIVISION MAD1106 and MAD1106e3 MAD1106, e3 SYMBOLS & DEFINITIONS Symbol Definition VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. C Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. OUTLINE AND CIRCUIT INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.740 0.780 18.80 19.81 B 0.235 0.265 5.969 6.731 C 0.120 0.140 3.048 3.556 D 0.270 0.330 6.858 8.382 E 0.320 0.380 8.128 9.652 F 0.100 BSC 2.540 BSC G 0.015 0.021 0.381 0.533 H 0.017 0.023 0.431 0.584 I 0.140 0.160 3.556 4.064 CIRCUIT CONFIGURATION OUTLINE Microsemi Scottsdale Division Page 2Copyright © 2005 6-28-2005 REV L 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503