MAC97A

MAC97 SEMTECH_ELEC | Alldatasheet

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Dated : 03/03/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MAC97… Silicon Bidirectional Triode Thyristors 1 . M T 1 2 . G 3 . M T 2 TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (TJ = 25 OC unless otherwise noted.) Parameter Symbol Value Unit Peak Repetitive Off-state Voltage(Gate Open, TJ = -40 to

110 OC)1) 1/2 Sine Wave 50 to 60 Hz, Gate Open

MAC97-4, MAC97A4 MAC97-6, MAC97A6 MAC97-8, MAC97A8 V DRM 200 400 600 V On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = 50 OC) IT(RMS) 0.8 A Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, Ta = 110 OC) ITSM 8 A Circuit Fusing Considerations TJ = -40 to 110 OC (t = 8.3 ms) I 2t 0.26 A 2s Peak Gate Voltage ( t ≤ 2 μs) V GM 5 V Peak Gate Power ( t ≤ 2 μs) P GM 5 W Average Gate Power (TC = 80 OC, t ≤ 8.3 ms) P G(AV) 0.1 W Peak Gate Current (t ≤ 2 μs) I GM 1 A Operating Junction Temperature Range T J -40 to 110 OC Storage Temperature Range T S -40 to 150 OC Thermal Characteristics Parameter Symbol Max. Unit Thermal Resistance, Junction to Case R θJC 75 OC/W Thermal Resistance, Junction to Ambient R θJA 200 OC/W MT2 G MT1

Dated : 03/03/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MAC97… Characteristics (TC = 25 OC, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Peak Bloking Current1) VD = Rated VDRM, TJ = 110 OC, Gate Open I RRM 0.1 mA Peak On-State Voltage (Either Direction) (ITM = 1.1 A Peak; Pulse Width ≤ 2 ms, Duty Cycle ≤ 2 %) VTM 1.65 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MAC97 MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MAC97A I GT mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ohms) MT2(+), G(+) All Types MT2(+), G(-) All Types MT2(-), G(-) All Types MT2(-), G(+) All Types D = Rated VDRM, RL = 10 KOhms ,TJ = 110 OC MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) All Types MT2(-), G(+) All Types V GT 0.1 0.1 2.5 V Holding Current (VD = 12 Vdc, ITM = 200 mA, Gate Open) I H 5 mA Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 1 Apk, IG = 25 mA) tgt 2 μs Critical Rate-of-Rise of Commutation Voltage (f = 250 Hz, ITM = 1 A, Commutating di/dt = 1.5 A/ms, On-State Current Duration=2ms, VDRM = 200 V, Gate Unenergized, TC = 110 OC, Gate Source Resistance = 150 Ohms) dv/dtc 1.5 V/ μs Critical Rate-of-Rise of Off Sate Voltage (Vpk = Rated VDRM, TC = 110 OC,Gate Open, Exponential Method) dv/dt 10 V/ μs 1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.