MAC320A8FP ONSEMI | Alldatasheet

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© Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2

1 Publication Order Number:

Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

  • Blocking V oltage to 600 V olts
  • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
  • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
  • Gate Triggering Guaranteed in Four Modes
  • Indicates UL Registered — File #E69369
  • Device Marking: Logo, Device Type, e.g., MAC320A8FP, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage(1) (TJ = −40 to +125°C, Sine Wave 50 to

60 Hz, Gate Open)

VDRM, VRRM

600 Volts

On-State RMS Current (TC = +75°C, Full Cycle Sine Wave 50 to 60 Hz)(2) IT(RMS) 20 Amps Peak Non−Repetitive Surge Current (One Full Cycle, 60 Hz, TC = +75°C, preceded and followed by rated current) ITSM 150 Amps Peak Gate Power (TC = +75°C, Pulse Width = 2 μs) PGM 20 Watts Peak Gate Voltage (TC = +75°C, Pulse Width = 2 μs) VGM 10 Volts Average Gate Power (TC = +75°C, t = 8.3 ms) PG(AV) 0.5 Watt Peak Gate Current (TC = +75°C, Pulse Width = 2 μs) IGM 2.0 Amps RMS Isolation Voltage (TA = 25°C, Relative Humidity /C0112 20%) () V(ISO) 1500 Volts Operating Junction Temperature Range TJ −40 to +125 Storage Temperature Range Tstg −40 to +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. ISOLATED TRIACs

20 AMPERES RMS

ORDERING INFORMATION

MAC320A8FP ISOLATED TO220FP 500/Box http://onsemi.com MT1 G MT2 ISOLATED TO−220 Full Pack CASE 221C STYLE 3 PIN ASSIGNMENT Main Terminal 2 Gate Main Terminal 1

http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.8 °C/W Thermal Resistance, Case to Sink RθCS 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) T J = 25°C TJ = +125°C IDRM, IRRM — 2.0 μA mA OFF CHARACTERISTICS Peak On-State Voltage (ITM = /C003428 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle /C0112 2%) VTM — 1.4 1.7 Volts ON CHARACTERISTICS Peak Gate Trigger Current (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT mA Peak Gate Trigger Voltage (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) VGT 0.9 0.9 1.1 1.4 2.0 2.0 2.0 2.5 Volts Gate Non−Trigger Voltage (Main Terminal Voltage = 12 V, RL = 100 Ω , TJ = +110°C) All Four Quadrants VGD 0.2 — — Volts Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = /C0034200 mA) IH — 6.0 40 mA Turn-On Time (VD = Rated VDRM, ITM = 28 A, IGT = 120 mA, Rise Time = 0.1 μs, Pulse Width = 2 μs) tgt — 1.5 10 μs DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 28 A, Commutating di/dt = 10 A/ms, Gate Unenergized, TC = +75°C) dv/dt(c) — 5.0 — V/μs

http://onsemi.com + Current + Voltage VTM IH Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current Voltage Current Characteristic of Triacs (Bidirectional Device) IDRM at VDRM on state off state IRRM at VRRM Quadrant 1 MainTerminal 2 + Quadrant 3 MainTerminal 2 − VTM IH VTM Maximum On State Voltage IH Holding Current MT1 (+) IGT GATE (+) MT2 REF MT1 (−) IGT GATE (+) MT2 REF MT1 (+) IGT GATE (−) MT2 REF MT1 (−) IGT GATE (−) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) Quadrant III Quadrant IV Quadrant II Quadrant I Quadrant Definitions for a Triac IGT − + IGT All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used.

http://onsemi.com PACKAGE DIMENSIONS ISOLATED TO−220 Full Pack CASE 221C−02 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. −Y− −B− −T− Q P A K H Z G L F D 3 PL MBM0.25 (0.010) Y E N S J R C SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.680 0.700 17.28 17.78 B 0.388 0.408 9.86 10.36 C 0.175 0.195 4.45 4.95 D 0.025 0.040 0.64 1.01 E 0.340 0.355 8.64 9.01 F 0.140 0.150 3.56 3.81 G 0.100 BSC 2.54 BSC H 0.110 0.155 2.80 3.93 J 0.018 0.028 0.46 0.71 K 0.500 0.550 12.70 13.97 L 0.045 0.070 1.15 1.77 P 0.270 0.290 6.86 7.36 Q 0.480 0.500 12.20 12.70 R 0.090 0.120 2.29 3.04 S 0.105 0.115 2.67 2.92 Z 0.070 0.090 1.78 2.28 123 STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MAC320A8FP/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative