MAC223A6 ONSEMI | Alldatasheet

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© Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2

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MAC223A6, MAC223A8, MAC223A10 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies; or wherever full−wave silicon−gate−controlled devices are needed.

  • Off−State Voltages to 800 V olts
  • All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
  • Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat Dissipation
  • Gate Triggering Guaranteed in Four Modes
  • Device Marking: Logo, Device Type, e.g., MAC223A6, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage(1) (TJ = −40 to 125°C, Sine Wave 50 to

60 Hz, Gate Open)

VDRM, VRRM 400 600 800 Volts On−State Current RMS Full Cycle Sine Wave 50 to 60 Hz (TC = 80°C) IT(RMS) 25 A Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C) Preceded and followed by rated current ITSM 250 A Circuit Fusing (t = 8.3 ms) I2t 260 A2s Peak Gate Current (t /C0118 2.0 μsec; TC = +80°C) IGM 2.0 A Peak Gate Voltage (t /C0118 2.0 μsec; TC = +80°C) VGM /C003410 Volts Peak Gate Power (t /C0118 2.0 μsec; TC = +80°C) PGM 20 Watts Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.5 Watts Operating Junction Temperature Range TJ −40 to 125 °C Storage Temperature Range Tstg −40 to 150 °C Mounting Torque — 8.0 in. lb. (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. TRIACS

25 AMPERES RMS

ORDERING INFORMATION

TO−220AB CASE 221A STYLE 4 2 3 PIN ASSIGNMENT

3 Gate

4 Main Terminal 2

http://onsemi.com 500/Box 500/Box MT1 G MT2 Preferred devices are recommended choices for future use and best overall value.

MAC223A6, MAC223A8, MAC223A10 http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 1.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise indicated; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current T J = 25°C (VD = Rated VDRM, VRRM; Gate Open) T J = 125°C IDRM, IRRM 2.0 μA mA ON CHARACTERISTICS Peak On−State Voltage (ITM = /C003435 A Peak, Pulse Width /C01182 ms, Duty Cycle /C01182%) VTM — 1.4 1.85 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(−), G(+) IGT mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(−), G(+) VGT 1.1 1.3 2.0 2.5 Volts Gate Non −trigger Voltage (VD = 12 V, TJ = 125°C, RL = 100 Ω) All Quadrants VGD 0.2 0.4 — Volts Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = /C0034200 mA) IH — 10 50 mA Turn−On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) tgt — 1.5 — μs DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125°C) dv/dt — 40 — V/μs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) dv/dt(c) — 5.0 — V/μs

MAC223A6, MAC223A8, MAC223A10 http://onsemi.com + Current + Voltage VTM IH Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current Voltage Current Characteristic of Triacs (Bidirectional Device) IDRM at VDRM on state off state IRRM at VRRM Quadrant 1 MainTerminal 2 + Quadrant 3 MainTerminal 2 − VTM IH VTM Maximum On State Voltage IH Holding Current MT1 (+) IGT GATE (+) MT2 REF MT1 (−) IGT GATE (+) MT2 REF MT1 (+) IGT GATE (−) MT2 REF MT1 (−) IGT GATE (−) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) Quadrant III Quadrant IV Quadrant II Quadrant I Quadrant Definitions for a Triac IGT − + IGT All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used.

MAC223A6, MAC223A8, MAC223A10 http://onsemi.com PACKAGE DIMENSIONS STYLE 4: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 TO−220AB CASE 221A−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 A K L V G D N Z H Q FB 123 −T− SEATING PLANE S R J U T C ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MAC223A/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative