MAC210-4 MOTOROLA | Alldatasheet

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3–75Motorola Thyristor Device Data /C0084/C0114/C0105/C0097/C0099/C0115 Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

  • Blocking Voltage to 800 Volts
  • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
  • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
  • Gate Triggering Guaranteed in Three Modes (MAC210 Series) or Four Modes (MAC210A Series) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC210-4, MAC210A4 MAC210-6, MAC210A6 MAC210-8, MAC210A8 MAC210-10, MAC210A10 VDRM 200 400 600 800 Volts On-State Current RMS (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 10 Amps Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C) Preceded and followed by Rated Current ITSM 100 Amps Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) PGM 20 Watts Average Gate Power (TC = +70°C, t = 8.3 ms) PG(AV) 0.35 Watt Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) IGM 2 Amps Operating Junction T emperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +125 °C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0065/C0067/C0050/C0049/C0048 /C0083/C0101/C0114/C0105/C0101/C0115 /C0077/C0065/C0067/C0050/C0049/C0048/C0065 /C0083/C0101/C0114/C0105/C0101/C0115 CASE 221A-04 (TO-220AB) STYLE 4 TRIACs

10 AMPERES RMS

G MT2

/C0077/C0065/C0067/C0050/C0049/C0048 /C0083/C0101/C0114/C0105/C0101/C0115 /C0077/C0065/C0067/C0050/C0049/C0048/C0065 /C0083/C0101/C0114/C0105/C0101/C0115 3–76 Motorola Thyristor Device Data THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 2.2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Peak Blocking Current (VD = Rated VDRM , Gate Open) TJ = 25°C TJ = +125°C IDRM µA mA Peak On-State Voltage (Either Direction) (ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle /C0112 2%) VTM — 1.2 1.65 Volts Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT mA Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM , RL = 10 k ohms, TJ = +125°C) MT2(–), G(+) “A” SUFFIX ONLY VGT 0.2 0.2 0.9 0.9 1.1 1.4 2.5 volts Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA, TC = +25°C) IH — 6 50 mA Turn-On Time (Rated VDRM , ITM = 14 A) (IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) tgt — 1.5 — µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM , ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70°C) dv/dt(c) — 5 — V/µs Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM , Exponential Voltage Rise, Gate Open, TC = +70°C) dv/dt — 100 — V/µs