MAC15D MOTOROLA | Alldatasheet
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3–55Motorola Thyristor Device Data /C0084/C0082/C0073/C0065/C0067/C0083 /C0083/C0105/C0108/C0105/C0099/C0111/C0110 /C0066/C0105/C0100/C0105/C0114/C0101/C0099/C0116/C0105/C0111/C0110/C0097/C0108 /C0084/C0104/C0121/C0114/C0105/C0115/C0116/C0111/C0114/C0115 Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
- Blocking Voltage to 800 Volts
- On-State Current Rating of 15 Amperes RMS at 80°C
- Uniform Gate Trigger Currents in Three Modes
- High Immunity to dv/dt — 250 V/µs minimum at 125°C
- Minimizes Snubber Networks for Protection
- Industry Standard TO-220AB Package
- High Commutating di/dt — 9.0 A/ms minimum at 125°C MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit VDRM Peak Repetitive Off-State Voltage (1) (–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC15D MAC15M MAC15N 400 600 800 Volts IT(RMS) On-State RMS Current (60 Hz, TC = 80°C) 15 A ITSM Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) 150 A I2t Circuit Fusing Consideration (t = 8.3 ms) 93 A2sec PGM Peak Gate Power (Pulse Width ≤/n6368617200000000000000001.0 µs, TC = 80°C) 20 Watts PG(AV) Average Gate Power (t = 8.3 ms, TC = 80°C) 0.5 Watts TJ Operating Junction T emperature Range –40 to +125 °C Tstg Storage Temperature Range –40 to +150 °C THERMAL CHARACTERISTICS R θJC R θJA Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient 2.0 62.5 °C/W TL Maximum Lead T emperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0065/C0067/C0049/C0053 /C0083/C0069/C0082/C0073/C0069/C0083 CASE 221A-06 (TO-220AB) Style 4 MT2 MT1 MT2 G TRIACS
15 AMPERES RMS
*Motorola preferred devices /C0042 REV 1
Figure 8. Critical Rate of Rise of Off-State Voltage Figure 9. Critical Rate of Rise of
200 VRMS
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage