MAC15-4FP MOTOROLA | Alldatasheet

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3–63Motorola Thyristor Device Data /C0084/C0114/C0105/C0097/C0099/C0115 Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

  • Blocking Voltage to 800 Volts
  • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
  • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
  • Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes (MAC15AFP Series) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC15-4FP , MAC15A4FP MAC15-6FP , MAC15A6FP MAC15-8FP , MAC15A8FP MAC15-10FP , MAC15A10FP VDRM 200 400 600 800 Volts On-State RMS Current (TC = +80°C)(2) Full Cycle Sine Wave 50 to 60 Hz (TC = +95°C) IT(RMS) 15 Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) preceded and followed by rated current ITSM 150 Amps Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) PGM 20 Watts Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.5 Watt Peak Gate Current IGM 2 Amps Peak Gate Voltage VGM 10 Volts RMS Isolation Voltage (TA = 25°C, Relative Humidity /C0112 20%) V(ISO) 1500 Volts Operating Junction T emperature TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0065/C0067/C0049/C0053/C0070/C0080 /C0083/C0101/C0114/C0105/C0101/C0115 /C0077/C0065/C0067/C0049/C0053/C0065/C0070/C0080 /C0083/C0101/C0114/C0105/C0101/C0115 CASE 221C-02 STYLE 3 ISOLATED TRIACs THYRISTORS

15 AMPERES RMS

G MT2

/C0077/C0065/C0067/C0049/C0053/C0070/C0080 /C0083/C0101/C0114/C0105/C0101/C0115 /C0077/C0065/C0067/C0049/C0053/C0065/C0070/C0080 /C0083/C0101/C0114/C0105/C0101/C0115 3–64 Motorola Thyristor Device Data THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 2 °C/W Thermal Resistance, Case to Sink R θCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient R θJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Peak Blocking Current (Either Direction) TJ = 25°C (VD = Rated VDRM , TJ = 125°C, Gate Open) IDRM — µA mA Peak On-State Voltage (Either Direction) (ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle /C0112 2%) VTM — 1.3 1.6 Volts Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT mA Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM , RL = 10 kΩ , TJ = +110°C) MT2(–), G(+) “A” SUFFIX ONLY VGT 0.2 0.2 0.9 0.9 1.1 1.4 2.5 Volts Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) IH — 6 40 mA Turn-On Time (VD = Rated VDRM , ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) tgt — 1.5 — µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM , ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80°C) dv/dt(c) — 5 — V/µs QUADRANT DEFINITIONS QUADRANT II QUADRANT I QUADRANT III QUADRANT IV MT2(+) MT2(–) G(–) G(+) Trigger devices are recommende d for gating on Triacs. They provide: 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. ELECTRICAL CHARACTERISTICS of RECOMMENDED BIDIRECTIONAL SWITCHES Usage General Part Number MBS4991 MBS4992 VS 6–10 V 7.5–9 V IS 350 µA Max 120 µA Max VS1–VS2 0.5 V Max 0.2 V Max Temperature Coefficient 0.02%/°C Typ 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.