MAC12D MOTOROLA | Alldatasheet
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3–53Motorola Thyristor Device Data /C0065/C0100/C0118/C0097/C0110/C0099/C0101 /C0073/C0110/C0102/C0111/C0114/C0109/C0097/C0116/C0105/C0111/C0110 /C0084/C0082/C0073/C0065/C0067/C0083 Silicon Bidirectional Thyristors Designed for high performance full–wave ac control applications where high noise immunity and commutating di/dt are required.
- Blocking Voltage to 800 Volts
- On-State Current Rating of 12 Amperes RMS at 70°C
- Uniform Gate Trigger currents in Three Modes
- High Immunity to dv/dt — 250 V/µs minimum at 125°C
- High Commutating di/dt — 6.5 A/ms minimum at 125°C
- Industry Standard TO–220 AB Package
- High Surge Current Capability — 120 Amperes MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Off-State Voltage (1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D MAC12M MAC12N VDRM 400 600 800 Volts On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 70°C) IT(RMS) 12 A Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) ITSM 100 A Circuit Fusing Consideration (t = 8.3 ms) I2t 41 A2sec Peak Gate Power (Pulse Width ≤/n6368617200000000000000001.0 µs, TC = 80°C) PGM 16 Watts Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.35 Watts Operating Junction T emperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient R θJC R θJA 2.2 62.5 °C/W Maximum Lead T emperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current T J = 25°C (VD = Rated VDRM, Gate Open) T J =1 25°C IDRM — 0.01 2.0 mA (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0065/C0067/C0049/C0050 /C0083/C0069/C0082/C0073/C0069/C0083 CASE 221A–06 (TO-220AB) Style 4 MT1 MT2 G TRIACS
12 AMPERES RMS
*Motorola preferred devices MT2 /C0042 REV 1
/C0077/C0065/C0067/C0049/C0050 /C0083/C0069/C0082/C0073/C0069/C0083 3–54 Motorola Thyristor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Peak On-State Voltage* (ITM = ±17 A) VTM — — 1.85 Volts Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω ) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IGT 5.0 5.0 5.0 mA Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH — 20 40 mA Latch Current (VD = 24 V, IG = 35 mA) MT2(+), G(–) IL mA Gate Trigger Voltage (VD = 12 V, RL = 100 Ω ) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) VGT 0.5 0.5 0.5 0.69 0.77 0.72 1.5 1.5 1.5 Volts DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current* (VD = 400 V, ITM =4.4A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) (dv/dt)c 6.5 — — A/ms Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM , Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 250 — — V/µs *Indicates Pulse T est: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.