MAC12HCD ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2001 November, 2001 – Rev. 2

1 Publication Order Number:

MAC12HCD, MAC12HCM, MAC12HCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full–wave, silicon gate–controlled devices are needed.

  • Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
  • High Commutating di/dt and High Immunity to dv/dt @ 125°C
  • Minimizes Snubber Networks for Protection
  • Blocking V oltage to 800 V olts
  • On-State Current Rating of 12 Amperes RMS at 80°C
  • High Surge Current Capability – 100 Amperes
  • Industry Standard TO-220AB Package for Ease of Design
  • Glass Passivated Junctions for Reliability and Uniformity
  • Device Marking: Logo, Device Type, e.g., MAC12HCD, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12HCD MAC12HCM MAC12HCN VDRM, VRRM 400 600 800 Volts On-State RMS Current (All Conduction Angles; TC = 80°C) IT(RMS) 12 A Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) ITSM 100 A Circuit Fusing Consideration (t = 8.33 ms) I2t 41 A2sec Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 16 Watts Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.35 Watts Operating Junction Temperature Range TJ –40 to +125 Storage Temperature Range Tstg –40 to +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. TRIACS

12 AMPERES RMS

Preferred devices are recommended choices for future use and best overall value. Device Package Shipping

ORDERING INFORMATION

MAC12HCD TO220AB 50 Units/Rail MAC12HCM TO220AB MAC12HCN TO220AB TO–220AB CASE 221A STYLE 4 2 3 PIN ASSIGNMENT

3 Gate

4 Main Terminal 2

50 Units/Rail

G MT2 http://onsemi.com

MAC12HCD, MAC12HCM, MAC12HCN http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance — Junction to Case — Junction to Ambient R θJC R θJA 2.2 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM , VRRM , Gate Open) T J = 25°C TJ = 125°C IDRM , IRRM — 0.01 2.0 mA ON CHARACTERISTICS Peak On-State Voltage(1) (ITM = ±17 A) VTM — — 1.85 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω ) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IGT mA Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH — — 60 mA Latch Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IL mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω ) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) VGT 0.5 0.5 0.5 1.5 1.5 1.5 V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, CL = 10 µF, LL = 40 mH, with Snubber) (di/dt)c 15 — — A/ms Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM , Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 600 — — V/µs Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz di/dt — — 10 A/µs (1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

MAC12HCD, MAC12HCM, MAC12HCN http://onsemi.com + Current + Voltage VTM IH Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current Voltage Current Characteristic of Triacs (Bidirectional Device) IDRM at VDRM on state off state IRRM at VRRM Quadrant 1 MainTerminal 2 + Quadrant 3 MainTerminal 2 –VTM IH VTM Maximum On State Voltage IH Holding Current MT1 (+) IGT GATE (+) MT2 REF MT1 (–) IGT GATE (+) MT2 REF MT1 (+) IGT GATE (–) MT2 REF MT1 (–) IGT GATE (–) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) Quadrant III Quadrant IV Quadrant II Quadrant I Quadrant Definitions for a Triac IGT – + IGT All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used.

MAC12HCD, MAC12HCM, MAC12HCN http://onsemi.com PACKAGE DIMENSIONS STYLE 4: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 TO–220 CASE 221A–09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE–T– C ST U R J

MAC12HCD, MAC12HCM, MAC12HCN http://onsemi.com Notes

MAC12HCD, MAC12HCM, MAC12HCN http://onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION JAPAN : ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone : 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MAC12HC/D Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800–282–9855 Toll Free USA/Canada