MAC12SM ONSEMI | Alldatasheet
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Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 2
1 Publication Order Number:
MAC12SM, MAC12SN Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.
- Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits
- Blocking V oltage to 800 V olts
- On-State Current Rating of 12 Amperes RMS at 70°C
- High Surge Current Capability - 90 Amperes
- Rugged, Economical TO220AB Package
- Glass Passivated Junctions for Reliability and Uniformity
- Maximum Values of IGT , VGT and IH Specified for Ease of Design
- High Commutating di/dt - 8.0 A/ms Minimum at 110°C
- Immunity to dV/dt - 15 V/sec Minimum at 110°C
- Operational in Three Quadrants: Q1, Q2, and Q3
- Device Marking: Logo, Device Type, e.g., MAC12SM, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12SM MAC12SN VDRM, VRRM 600 800 V On-State RMS Current (All Conduction Angles; TC = 70°C) IT(RMS) 12 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 110°C) ITSM 90 A Circuit Fusing Consideration (t = 8.33 ms) I2t 33 A2sec Peak Gate Power (Pulse Width = 1.0 sec, TC = 70°C) PGM 16 W Average Gate Power (t = 8.3 msec, TC = 70°C) PG(AV) 0.35 W Operating Junction Temperature Range TJ - 40 to 110 Storage Temperature Range Tstg - 40 to 150 1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. TRIACS
12 AMPERES RMS
Preferred devices are recommended choices for future use and best overall value. Device Package Shipping
ORDERING INFORMATION
MAC12SM TO220AB 50 Units/Rail MAC12SN TO220AB TO-220AB CASE 221A Style 4 2 3 PIN ASSIGNMENT
3 Gate
4 Main Terminal 2
http://onsemi.com
50 Units/Rail
G MT2 MARKING DIAGRAM xx = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year WW = Work Week MAC12xx ALYWW
MAC12SM, MAC12SN http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance - Junction to Case - Junction to Ambient R JC R JA 2.2 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM , VRRM ; Gate Open) T J = 25°C TJ = 110°C IDRM , IRRM - 0.01 2.0 mA ON CHARACTERISTICS Peak On-State Voltage(1) (ITM = ± 17 A) VTM - - 1.85 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IGT 1.5 2.5 2.7 5.0 5.0 5.0 mA Holding Current (VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH - 2.5 10 mA Latching Current (VD = 12 V, IG = 5 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IL 3.0 5.0 3.0 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGT 0.45 0.45 0.45 0.68 0.62 0.67 1.5 1.5 1.5 V DYNAMIC CHARACTERISTICS Critical Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/s, Gate Open, TJ = 110°C, f = 500 Hz, Snubber: Cs = 0.01 f, Rs = 15 ) (di/dt)c 8.0 10 - A/ms Critical Rate of Rise of Off-State Voltage (VD = 67% VDRM , Exponential Waveform, RGK = 1 K, TJ = 110°C) dV/dt 15 40 - V/s Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 sec; diG/dt = 1 A/sec; Igt = 100 mA; f = 60 Hz di/dt - - 10 A/s 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
MAC12SM, MAC12SN http://onsemi.com + Current + Voltage VTM IH Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current Voltage Current Characteristic of Triacs (Bidirectional Device) IDRM at VDRM on state off state IRRM at VRRM Quadrant 1 MainTerminal 2 + Quadrant 3 MainTerminal 2 -VTM IH VTM Maximum On State Voltage IH Holding Current MT1 (+) IGT GATE (+) MT2 REF MT1 (-) IGT GATE (+) MT2 REF MT1 (+) IGT GATE (-) MT2 REF MT1 (-) IGT GATE (-) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) Quadrant III Quadrant IV Quadrant II Quadrant I Quadrant Definitions for a Triac IGT - + IGT All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used.
MAC12SM, MAC12SN http://onsemi.com PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE-T- C ST U R J STYLE 4: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION JAPAN : ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone : 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MAC12SM/D Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada