MAC08BT1 MOTOROLA | Alldatasheet
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3–40 Motorola Thyristor Device Data /C0083/C0079/C0084/C0262/C0050/C0050/C0051 /C0084/C0114/C0105/C0097/C0099 Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing.
- Sensitive Gate Trigger Current in Four Trigger Modes
- Blocking Voltage to 600 Volts
- Glass Passivated Surface for Reliability and Uniformity
- Surface Mount Package
- Devices Supplied on 1 K Reel MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Blocking Voltage(1) (1/2 Sine Wave, Gate Open, TJ = 25 to 110°C) MAC08BT1 MAC08DT1 MAC08MT1 VDRM 200 400 600 Volts On-State Current RMS (TC = 80°C) IT(RMS) 0.8 Amps Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 25°C) ITSM 10 AmpsPeak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 25°C) ITSM 10 Amps Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s Peak Gate Power (t < 2.0 µs) PGM 5.0 Watts Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.1 Watts Operating Junction T emperature Range TJ –40 to +110 °C Storage Temperature Range Tstg –40 to +150 °C Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum) TL 260 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 R θJA 156 °C/WThermal Resistance, Junction to Ambient PCB Mounted per Figure 1 R θJA 156 °C/W Thermal Resistance, Junction to T ab Measured on Anode T ab Adjacent to Epoxy R θJT 25 °C/WThermal Resistance, Junction to T ab Measured on Anode T ab Adjacent to Epoxy R θJT 25 °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0065/C0067/C0048/C0056/C0066/C0084/C0049 /C0083/C0101/C0114/C0105/C0101/C0115 TRIAC
0.8 AMPERE RMS
(SOT-223) STYLE 11 *Motorola preferred devices /C0042 REV 1
Figure 1. PCB for Thermal Impedance and BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal Figure 4. Current Derating, Minimum Pad Size Figure 5. Current Derating, 1.0 cm Square Pad Figure 6. Current Derating, 2.0 cm Square Pad
50 OR 60 Hz
Figure 7. Current Derating
Figure 8. Power Dissipation
75 VRMS ,
Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 9. Thermal Response, Device Figure 10. Simplified Q1 (dv/dt)c Test Circuit Figure 11. Typical Commutating dv/dt versus Figure 12. Typical Commutating dv/dt versus
Figure 13. Exponential Static dv/dt versus Figure 14. Typical Gate Trigger Current Variation Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation