MABC-001000-DP000L MA-COM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
Robust GaN Protection at Any Power Up/Power Down Sequence Fixed Gate Bias Voltage with Pulsed Drain Bias Voltage. Add-On Module Allows for Gate Pulsing Open Drain Output Current of ≤ 200 mA for External MOSFET Switch Drive Internal Thermistor or External Temperature Sensor Voltage for Gate Bias Sum 30 dB Typical EMI/RFI Rejection at All I/O Ports 6.60 x 22.48 mm2 Package with 1 mm Pitch SMT Leads Target ≤ 500 ns Total Switch Transition Time Gate Bias Output Current ≤ 50 mA for Heavy RF Compression RoHS* Compliant and 260°C Reflow Compatible
Description
The MABC-001000-DP000L is a bias controller that provides proper gate voltage and pulsed drain voltage biasing for a device under test (DUT). Applicable DUT’s would be depletion -mode GaN (Gallium Nitride) or GaAs (Gallium Arsenide) power amplifiers or HEMT devices. The module also provides bias sequencing so that pulsed drain voltage cannot be applied to a DUT unless the negative gate bias voltage is present. The applications section of this datasheet will show how the module can be implemented for the following two applications: Application Option 1: Fixed negative gate biasing with pulsed drain biasing. Application Option 2: Pulsed negative gate biasing with pulsed drain biasing. Both of these applications will recommend the external circuitry and p-Channel Power MOSFET. The MABC -001000-DP000L module can also be installed onto an MABC -001000-PB1PPR evaluation board for evaluation, test, and characterization purposes. Ordering Information2 Part Number Packaging MABC-001000-DP000L Tray MABC-001000-DP00TL Tape & Reel MABC-001000-PB1PPR Gate and Drain Pulsing Evaluation Board * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Pin No. Label Function
1 GFB Gate Voltage (-) Feedback
2 NC No Connect
3 GCO Gate Voltage (-) Control Output
4 GCI Gate Voltage (-) Control Input
5 VGS Gate (-) Supply Voltage
6 NC No Connect
7 GND Ground
8 VDS Drain (+) Supply Voltage
9 SWG Driver Output to MOS Switch Gate
10 NC No Connect
11 P4V Auxiliary +4.3 VDC Output
12 ENS MOS Switch Enable TTL
13 GND Ground
14 GND Ground
- Reference Application Note M513 for reel size information. 1. Unused package pins must be left open and not connected to ground. Functional Schematic 876 1314 V_REG GFB NC GCO GCI VGS ENS P4V NC SWG VDS NC GND GND GND
GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +12 to +55 V Rev. V1 MABC-001000-DP000L M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Electrical Characteristics: TA = 25°C Symbol Parameter Conditions Min Typ Max Unit VDS Supply Voltage, Positive 10 50 70 V IDS Supply Current, Positive - 14 - mA VGS Supply Voltage, Negative -8 -6 0 V IGS Supply Current, Negative - -3 - mA VENL ENS Input Voltage, Low 0 0 0.3 V VENH ENS Input Voltage, High 2 3.3 4.3 V IENS ENS Input Current - 40 - uA VGTH Input, Gate Feedback Threshold to VGS - 2.7 - V VDTH Input, Drain Feedback Threshold - 65% VDS - V VGC Output Voltage, Pulsed/Fixed Gate -8 -3.5 0 V VGCR Output Voltage, Pulsed/Fixed Gate Ripple (Peak-to-peak) - 50 - mV IGC Output Gate Current, Peak - 50 - mA ROFF Output Drive, Open Drain, OFF State VDS = 50 V Temp. = +85°C - 4M - Ω RON Output Drive, Open Drain, ON State - 1.2 - Ω ION Output Drive, Current, ON State - 100 200 mA Absolute Maximum Ratings Parameter Min. Max. Supply (+) Voltage, VDS 0 V +60 V Supply (-) Voltage, VGS -10 V 0 V Logic Voltage, ENS, GSE -0.3 V +4.5 Analog (-) Voltage, GCI, GFB -10 V 0 V Switch Driver Voltage, SWG 0 V +75 V Switch Driver Sink Current, SWG - -200 mA Lead Soldering Temp (10 s) - +260°C Operating Temperature -40°C +85°C Storage Temperature -65°C +150°C Recommended Operating Conditions Parameter Typical Supply (+) Voltage, VDS +12 V to +55 V Supply (-) Voltage, VGS -8 V to -2 V Logic Voltage, ENS 0 V to +4.3 V Analog (-) Voltage, GCI, GFB -8 V to -2 V Switch Driver Sink Current, SWG -1 mA to -200 mA Operating Temperature -40°C to +85°C
GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +12 to +55 V Rev. V1 MABC-001000-DP000L M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Timing Diagrams TTL VDS VGS RF +5V +50V -3V -8V 90% PULSE ENABLE FOR t D1 D2 RISE1 FALL1 t t t t tFALL2t 10% 90% 10% RISE2t 10% 90% 90% 10%0 +50VVOD GATE & DRAIN SWITCH OPEN DRAIN OUTPUT MOSFET SWITCH OUTPUT PULSED GATE OUTPUT RF OUTPUT Symbol Parameter Conditions Min Typ Max Unit tD1 Open Drain ON Propagation Delay3 RPULL-UP = 700 Ω VDS = 50 V IR = 71 mA avg. Switch Disconnected - 100 - ns tD3 Open Drain OFF Propagation Delay3 - 70 - ns tRISE1 Open Drain Rise Time4 - 115 - ns tFALL1 Open Drain Fall Time4 - 60 - ns tD1 MOS Switch ON Propagation Delay3,5 - 300 - ns VDS = 50 V MOS CISS = 2780 pF RDS,ON = 60 mΩ tD3 MOS Switch OFF Propagation Delay3,5 - 1.8 - µs tRISE1 MOS Switch Rise Time4,5 - 400 - ns tFALL1 MOS Switch Fall Time4,5 - 80 - µs tD2 Gate Bias ON Propagation Delay3,5 - 100 - ns tD4 Gate Bias OFF Propagation Delay3,5 - 200 - ns tRISE2 Gate Bias Rise Time4,5 - 500 - ns tFALL2 Gate Bias Fall Time4,5 - 400 - ns 3. Propagation delay is measured from 90% of the TTL signal to 10% of the signal of interest. 4. Rise and fall times are measured between 10% and 90% of the steady state signal. 5. Parameter was measured with MABC-001000-PB1PPR sample board. MAGX-L21214-650L00 was used as the DUT. Timing Characteristics: TA = 25°C ENS SWG VDD (Q1)6 GCO RF 6. Q1 refers to an external p-Channel HEXFET that pulses the drain of the DUT. See Applications Section for more information.
GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +12 to +55 V Rev. V1 MABC-001000-DP000L M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Applications Section Functional Description The MABC -001000-DP000L GaN Bias Controller/ Sequencer Module circuitry provides proper sequencing and generation of the gate voltage and pulsed drain voltage for a device under test (DUT). Reference the Product View and Pin Configuration table on page 1. The basic functions of the circuits within the module are described as follows: Overhead Voltages for the Circuits within the MABC-001000-DP000L Module ○ Pin 8 (VDS) is the Drain (+) Supply Voltage that provides the input voltage to a low drop - out linear regulator (VREG). This supplies the positive voltage for the circuits within the module. It also provides the Auxiliary +4.3 V Output to Pin 11 (P4V). ○ Pin 5 (VGS) is the Gate ( -) Supply Voltage that is also used to supply the negative voltage for the circuits within the module. Negative Gate Voltage for the Device Under Test (DUT) ○ A voltage follower op -amp circuit provides a low impedance output to Pin 3 (GCO) Gate Voltage ( -) Control Output. Pin 3 (GCO) output is applied to the gate terminal of a DUT as shown in Figure 1 on page 5. ○ The reference voltage for the voltage follower is provided by the Pin 4 (GCI) Gate Voltage ( -) Analog Input. This input reference voltage is developed by an external potentiometer/ resistive divider circuit as shown in Figure 1 on page 6. It is recommended to use the -8 V to -3 V voltage that is also applied to Pin 5 (VGS). ○ Reference: The external potentiometer is adjusted to set the gate voltage Pin 3 (GCO) to the DUT. Alternative voltage inputs such as a temperature compensation circuit or a Digital-to-Analog (DAC) converter could also be supplied to Pin 4 (GCI). Pin 9 (SWG) MOS Switch Driver Output ○ An N -Channel MOSFET develops the pulsed signal (SWG) to drive the resistive divider network for the gate of an external p -Channel HEXFET as shown in Figure 1 on page 5. The input signal for the internal MOSFET is provided by the output from the sequencing circuits. Sequencing Circuits ○ A voltage comparator circuit senses if the negative gate voltage is present as an input on Pin 1 (GFB) - Gate Voltage (-) Feedback. ○ A logic circuit provides the switched input enable signal for the N -Channel MOSFET. The following 3 signals must be at correct levels to generate the enable logic signal: Pin 12 (ENS) MOS Switch Enable TTL Negative gate voltage (GFB) is present The internal positive voltage output is present from V_REG
GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +12 to +55 V Rev. V1 MABC-001000-DP000L M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Physical Dimensions6,7,8 Recommended Landing Pattern6 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity This module is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM class 1B devices. 7. All dimensions are in inches. 8. Reference Application Note M538 for lead-free solder reflow recommendations. 9. Plating is 100% Sn over BeCu.