MAAP-011106 MA-COM | Alldatasheet
Document overview
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Technical content
Features
4 Stage Power Amplifier for E Band 20 dB Gain 15 dB input and output match 25 dBm saturated output power 30 dBm OIP3 Variable gain with adjustable bias Integrated detector Bare die RoHS* compliant and 260°C reflow compatible HBM ESD rating of 100 V Size: 3780x2500x50µm
Description
The MAAP-011106 is a bare die power amplifier that operates from 71 - 86 GHz. The amplifier provides 20 dB small signal gain. The input and output are matched to 50 Ω with bond wires to external board. It is designed for use as a power amplifier stage in transmit chains and is ideally suited for E band point to point radios. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using an efficient pHEMT process. Part Number Package MAAP-011106-DIE Die in Vacuum release gel pack Pad Configuration Pad No. Function Pad No. Function
1 VD1 9 VREF
2 VD2 10 GNDDET
3 VD3 11 VG4
4 VD4 12 VG3
5 GND 13 VG2
6 RFOUT 14 VG1
7 GND 15 GND
8 VDET 16 RFIN
17 GND
616 RFOUT
Power Amplifier, 71 - 86 GHz Rev. V1 MAAP-011106 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Electrical Specifications: RF: 71 - 86 GHz, VD = 4 V, Drain Current = 720 mA, TA = 25°C Parameter Units Min.1 Typ. Max. Frequency Range GHz 71 - 86 Gain dB 18 20 - Input Return Loss dB - 15 - Output Return Loss dB - 15 - P1dB dB - 23 - Pout with Pin = 13 dBm dBm - 25 - Psat (P4dB) dBm 24 25 - OIP3 (worst tone) dBm - 30 - IIP3 (worst tone) for Gain = 20 turned-down to -5 dB dBm - 10 - Quiescent DC Bias: ID1= 60 mA, ID2 = 120 mA, ID3 = 240 mA, ID4 = 300 mA. Total DC Power = 2.88 W 1Minimum limits are the on-wafer minimum test limits Absolute Maximum Ratings 2,3,4 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM Technology Solutions does not recommend sustained operation near these survivability limits. 4. Operating at nominal conditions with TJ ≤ 150°C will ensure MTTF > 1 x 106 hours. Parameter Absolute Max. Drain Voltage +4.3 V Drain Current 935 mA Gate Bias Voltage Input Power +16 dBm Storage Temperature -55°C to +150°C Operating Temperature -40°C to +85°C Junction Temperature 150°C Thermal Resistance 16.15°C/W Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these static sensitive devices.
Power Amplifier, 71 - 86 GHz Rev. V1 MAAP-011106 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Power Amplifier, 71 - 86 GHz Rev. V1 MAAP-011106 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Power Amplifier, 71 - 86 GHz Rev. V1 MAAP-011106 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Calibration Plane All data was measured on die with 200 µm pitch probes. The calibration plane is at the middle of the through, 178.5 µm from the middle of the RF pad. App Note [1] Biasing - All gates should be pinched -off (VG < -1 V) before applying drain voltage (VD = 4 V). Then the gate voltages can be increased until the desired quiescent drain current is reached in each stage. The recommended quiescent bias is VD = 4 V, ID1 = 60 mA, ID2 = 120 mA, ID3 = 240 mA and ID4 = 300 mA. The performance in this datasheet has been measured with fixed gate voltage and no drain current regulation under large signal operation. It is also possible to regulate the drain current dynamically, to limit the DC power dissipation under RF drive. To turn off the device, the turn on bias sequence should be followed in reverse. App Note [2] Bias Arrangement - Each DC pin (VD1,2,3,4 and VG1,2,3,4) needs to have bypass capacitance (120 pF and10 nF) mounted as close to the MMIC as possible. App Note [3] Wire Bonding - The loop height of the RF bonds should be minimized. Where the die is mounted above the PCB, it is recommended to use Reverse Ball-Stitch-on-Ball bonds (BSOB). If the die is mounted inside a cavity on the board, Forward Loop bonding may result in a lower loop height. V-shape RF bond with two wires (diameter = 25 µm is recommended for optimum RF performance. RF bond wire length to be minimized to reduce the inductance effect. Simulations suggest no more than 300 µm. Substrate RF pad can be optimised to improve the Microstrip to MMIC bond transition as shown in the example below.
Power Amplifier, 71 - 86 GHz Rev. V1 MAAP-011106 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Layout Dimensions App Note [4] Detector biasing schematic - As shown in the schematic below, the power detec- tor is biased by matched 120 kΩ resistors to a +5 V supply. The difference voltage between Vdet and Vref pins can be obtained using the op- amp differencing circuit shown below. Die Thickness: 50µm RF Pads = 60 x 120µm2 DC Pads = 100 x 100µm2