MAAP-010512 MA-COM | Alldatasheet

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Technical content

Amplifier, Power, 0.8 W 40.5 - 43.5 GHz Rev. V3 MAAP-010512 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Pin Configuration 1,2 Functional Schematic Features  Gain: 22 dB  P1dB: 27 dBm  High Linearity, OIP3: 38 dBm  Integrated Power Detector  Lead-Free 7 mm Laminate Package  RoHS* Compliant and 260°C Reflow Compatible

Description

The MAAP-010512 is a 4 -stage, high linearity 1W power amplifier in a 7x7 mm laminate package, allowing easy assembly. This PA product is fully matched to 50 ohms on both the input and output. It is designed for use as a power amplifier stage in transmit chains and is ideally suited for 42 GHz band point-to-point radios. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using an efficient pHEMT process.

Ordering Information

Pin No. Function Pin No. Function

1 RFIN 9 RFOUT

2 VG1 10 VD3

3 VG2 11 VD2

4 VG3 12 VD1

5 No Connection 13 No Connection

6 No Connection 14 No Connection

7 VREFERENCE 15 No Connection

8 VDETECTOR 16 No Connection

  1. MACOM recommends connecting unused package pins to ground. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. Part Number Package MAAP-010512-000000 Bulk quantity MAAP-010512-TR0200 200 Piece Reel MAAP-010512-TR0500 500 Piece Reel MAAP-010512-001SMB Sample Evaluation board

Amplifier, Power, 0.8 W 40.5 - 43.5 GHz Rev. V3 MAAP-010512 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Parameter Units Min. Typ. Max. Small Signal Gain dB 18.0 22.0 27.0 Gain Flatness cross Band dB - +/-1.0 - Input Return Loss dB - 15 - Output Return Loss dB - 12 - Reverse Isolation dB - 50 - Output P1dB dBm - 27.0 - Output IP3 dBm 32.5 38.0 - Saturated Output Power dBm 25.0 29.0 - Output IMD3 with Pout (scl) = 14 dBm dBc 37.0 48.0 - Supply Current3 mA - 1117 1300 Absolute Maximum Ratings 4,5,6 Parameter Absolute Max. Drain Voltage +4.3 V Gate Bias Voltage -1.5 V < Vg < 0 V Input Power 15 dBm Junction Temperature7 150°C Operating Temperature -40°C to +85°C Storage Temperature -55°C to +150°C Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Human Body Model Class 1A devices. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 6. Operating at nominal conditions with TJ ≤ 150°C will ensure MTTF > 1 x 106 hours. 7. Junction Temperature (TJ) = TC + Өjc * (V * I) Typical thermal resistance (Өjc) = 11.2° C/W. a) For TC = 25°C, TJ = 75°C @ 4 V, 1117 mA b) For TC = 85°C, TJ = 135°C @ 4 V, 1117 mA 3. Adjust Vgs between –1.0 V and –0.1 V to achieve specified supply current. Typical current 1117 mA = 217 (ID1) + 300 (ID2) + 600 (ID3) Electrical Specifications: Freq: 40.5 - 43.5 GHz, VD = 4 V, ID1 = 217 mA, ID2 = 300 mA, ID3 = 600 mA, TA = 25°C

Amplifier, Power, 0.8 W 40.5 - 43.5 GHz Rev. V3 MAAP-010512 3 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Input Return Loss Small Signal Gain Typical Performance Curves: VD = 4 V, ID1 = 217 mA, ID2 = 300 mA, ID3 = 600 mA, TA = 25°C Reverse Isolation Output Return Loss Output IP3 (Pout = 14 dBm SCL) C/I3 (Pout = 14 dBm SCL) -25 -20 -15 -10 Frequency (GHz) -25 -20 -15 -10 Frequency (GHz) -80 -70 -60 -50 -40 -30 Frequency (GHz) +25°C -40°C +85°C Frequency (GHz) +25°C -40°C +85°C Frequency (GHz) +25°C -40°C +85°C Frequency (GHz)

Amplifier, Power, 0.8 W 40.5 - 43.5 GHz Rev. V3 MAAP-010512 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Psat P1dB Typical Performance Curves: VD = 4 V, ID1 = 217 mA, ID2 = 300 mA, ID3 = 600 mA, TA = 25°C Detector Output (Diff), Vdet/ref Bias = +5V100k 0.001 0.01 0.1 101 -15 -10 -5 0 5 10 15 20 25 30

40.5 GHz

42.0 GHz

43.5 GHz

Output Power (dBm) +25°C -40°C +85°C Frequency (GHz) +25°C -40°C +85°C Frequency (GHz)

Amplifier, Power, 0.8 W 40.5 - 43.5 GHz Rev. V3 MAAP-010512 5 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 App Note [1] Biasing - It is recommended to bias the amplifier with Vd=4.0 V and Id=1117 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3 V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Each DC pin (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance (10 nF/1 µF) as close to the package as possible. App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by providing +5 V bias and measuring the difference in output voltage with standard op -amp in a differential mode configuration. Recommended Board Layout

Amplifier, Power, 0.8 W 40.5 - 43.5 GHz Rev. V3 MAAP-010512 6 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Lead-Free 7 mm x 7mm Laminate Package† † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 3 requirements.