MA08509D_1 MACOM | Alldatasheet

Document overview

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Technical content

Features

♦ 10 Watt CW Saturated Output Power Level ♦ Variable Drain Voltage (8-10V) Operation ♦ GaAs MSAG™ Process ♦ Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility

Description

The MA08509D is a 3-stage 10 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple im- plant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with auto- mated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Electrical Characteristics: On-Wafer, Z0 = 50Ω, VDD = 10V, VGG = -4V, Pin = 18 dBm Parameter Symbol Minimum Typical Maximum Units Bandwidth f 8.5 10.5 GHz Saturated Output Power POUT 39.0 41.0 dBm Power Added Efficiency PAE 25 32 % Small Signal Gain G 24 27 dB Input VSWR VSWR 2.5:1 4:1 Quiescent Gate Current IGQ 8 20 26 mA Quiescent Drain Current IDQ 1.3 2.0 2.5 A Drain Current @ 10 GHz IDD 3.9 4.5 A Harmonics 2f, 3f < -30 dBc Also Available in: Description Sample Board (Die) Die on Pedestal Mechanical Sample (Die) Part Number MAAP-008509-SMB004 M AAP-008509-PED000 M AAP-008509-MCH000

Amplifier, Power, 10W 8.5—10.5 GHz MA08509D M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev A Preliminary Information Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply V GG = -4 V, VDD= 0 V. 2. Ramp V DD to desired voltage, typically 10 V. 3. Adjust VGG to set IDQ, (approximately @ –4 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Maximum CW Operating Conditions1 Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 8.0 10.0 10.0 V Gate Voltage VGG -4.4 -4.0 -3.6 V Input Power PIN 18.0 20.0 dBm MMIC Base Temperature TB Note 3 °C Recommended Operating Conditions2 Parameter Symbol Absolute Maximum Units Input Power PIN 24.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -6.0 V Quiescent Drain Current (No RF) IDQ 2.7 A Quiescent DC Power Dissipated (No RF) PDISS 27 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 1. Operation beyond these limits may result in permanent damage to the part. 2. Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ
  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev A Preliminary Information OUT VD1 _2 VD3 VD3 VD 1, 2 IN VGG VGG VGG VGG VGG VGG 0.160mm. 2.296mm. 4.425mm. 4.580mm. 3.431mm. 4.580mm. 2.296mm. 4.424mm. 0.244mm.0.244mm. 0.443mm. 0.644mm. 1.989mm. 3.431mm 0.443mm. 0.644mm. 4.430mm. 0.160mm.0.166mm. Mechanical Information Chip Size: 4.58 x 4.58 x 0.075 mm (181 x 181 x 3 mils) VDD3 (2X)

Figure 4. Die Layout

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev A Preliminary Information

Figure 5. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. as required by bonding to either VGG 1 or VGG 3 (respectively). than 7 minutes. Refer to Application Note AN3017 for more detailed information. VDD to prevent damage to amplifier.