MAAPGM0079-DIE MACOM | Alldatasheet

Document overview

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Technical content

Features

♦ 17 Watt Saturated Output Power Level ♦ 20 Watt Saturated Output Power Level over 8-10 GHz Band ♦ Variable Drain Voltage (8-10V) Operation ♦ MSAG™ Process ♦ Robust Stability

Description

The MAAPGM0079-DIE is a 3 stage 20W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG process features robust silicon-like manufacturing processes, pla- nar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory met- als and the absence of platinum in the gate metal formulation prevents hydrogen poi- soning when employed in hermetic packaging. Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 4A2, Pin = 18 dBm, Rg = 20 Ω Primary Applications ♦ SatCom ♦ Commercial Avionics ♦ Radar Also Available in: Description Ceramic Package Sample Board (Die) Sample Board (Pkg) Mechanical Sample (Die) Part Number MAAP-000079-PKG001 M AAP-000079-SMB004 M AAP-000079-SMB001 M AAP-000079-MCH000

Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev A Preliminary Datasheet Maximum Ratings3 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply V GG = -2.7 V, VDD= 0 V. 2. Ramp V DD to desired voltage, typically 10.0 V. 3. Adjust V GG to set IDQ, (approximately @ –2.2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 4.0 10.0 10.0 V Gate Voltage VGG -2.6 -2.2 -1.5 V Input Power PIN 18.0 21.0 dBm Thermal Resistance ΘJC 2.2 °C/W MMIC Base Temperature TB Note 5 °C Recommended Operating Conditions4 Parameter Symbol Absolute Maximum Units Input Power PIN 23 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 6.6 A Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C Quiescent DC Power Dissipated (No RF) PDISS 65.8 W 3. Operation beyond these limits may result in permanent damage to the part. 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ Power Derating Curve, Quiescent (No RF) 0 20 40 60 80 100 120 140 160 180 MMIC Base Temperature (ºC) Peak Power Dissipation (W)
  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev A Preliminary Datasheet Fig 7. Power Added Efficiency vs. Input Power at VD=10V. - 2 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 Input Power (dBm) PAE (%)

7.5 GHz

8.5 GHz

9.5 GHz

10.5 GHz

Figure 8. Drain Current vs. Input Power Figure 9. Relative Gain vs. Output Power by Frequency at VD=8V and 25% IDSS

9.0 GHz

Figure 10. Relative Gain vs. Output Power by Frequency at VD=10V and 25% Figure 11. Third Order Intercept vs. Output Power and Frequency at 8V.

8 GHz

9 GHz

10 GHz

Figure 12. Third Order Intermod vs. Output Power and Frequency at 8V. All Data is at 40ºC MMIC base temperature, CW stimulus, unless otherwise noted.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev A Preliminary Datasheet All Data is at 40ºC MMIC base temperature, CW stimulus, unless otherwise noted.

Figure 13. Third Order Intercept vs. Output Power and Frequency at 10V. Figure 14. Third Order Intermod vs. Output Power and Frequency at 10V. Figure 15. Third Order Intercept vs. Temperature and Frequency at 10V and Pout = 39 dBm DCL. Figure 16. Third Order Intermod vs. Temperature and Frequency at 10V and Pout = 39 dBm DCL. Figure 17. Third Order Intercept vs. Output Power and %IDSS at 10V and 9GHz. Figure 18. Third Order Intermod vs. Output Power and %IDSS at 10V and 9GHz.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev A Preliminary Datasheet

Figure 11. Fixture used to characterize MAAPGM0079-DIE under CW stimulus.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev A Preliminary Datasheet Pad Size (μm) RF In and Out 100 x 200 DC Drain Supply Voltage VD1,2 200 x 150 DC Gate Supply Voltage VG1,2 150 x 150 Size (mils) 4 x 8 8 x 6 6 x 6 DC Gate Supply Voltage VG3 150 x 125 6 x 5 DC Drain Supply Voltage VD3 500 x 200 20 x 8 Bond Pad Dimensions Mechanical Information Chip Size: 5.000 x 8.150 x 0.075 mm (197 x 321 x 3 mils) Chip edge to bond pad dimensions are shown to the center of the bond pad.

Figure 12. Die Layout

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev A Preliminary Datasheet

Figure 13. Recommended operational configuration. Wire bond as shown. than 7 minutes. Refer to Application Note AN3017 for more detailed information. VDD to prevent damage to amplifier. Refer to Application Note AN3016. Application%20Notes/index.htm. over shown, the following rules must applied.

  1. the DC crossovers should approach and
  2. the printed DC traces that approach the
  3. the rated current capability of the DC
  4. the wires or ribbons used to make the DC