MAAP-000076-PKG001 MACOM | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
Features
♦ 16 Watt Saturated Output Power Level ♦ Variable Drain Voltage (8-10V) Operation ♦ MSAG Process Primary Applications ♦ Radio Communications ♦ SatCom
Description
The MAAP-000076-PKG001 is a 2-stage 16W power amplifier with on-chip bias networks in a 10 lead flange-mount ceramic package, allowing easy assembly. The package is hermetic and provides an excellent thermal path. This pr oduct is fully matched to 50 ohms on both the input and output. External DC blocking capacitors are not required since they are incorpor ated into the MMIC design. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. Pin # Description
1 VGG
5 VGG
6 VDD
8 RF OUT
10 VDD
Amplifier, Power, 16W 1.3-2.5 GHz M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev — Advance Datasheet MAAP-000076-PKG001 RoHS Compliant Maximum Ratings 3 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply V GG = -2.7 V, VDD= 0 V. 2. Ramp V DD to desired voltage, typically 10.0 V. 3. Adjust V GG to set IDQ, (approximately @ –2.2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 8.0 10 10 V Gate Voltage VGG -2.6 -2.0 -1.2 V Input Power PIN 24 27 dBm Thermal Resistance ΘJC °C/W Case Temperature TC Note 5 °C Junction Temperature TJ 150 °C Recommended Operating Conditions4 Parameter Symbol Absolute Maximum Units Input Power PIN 29 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 6.1 A Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C Quiescent DC Power Dissipated (No RF) PDISS 60.8 W 3. Operation beyond these limits may result in permanent damage to the part. 4. Operation outside of these ranges may reduce product reliability. 5. Case Temperature = 150°C — ΘJC* VDD * IDQ
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev — Advance Datasheet MAAP-000076-PKG001 RoHS Compliant
Figure 1. Package Dimensions consists of electrolytic gold over nickel plate.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev — Advance Datasheet MAAP-000076-PKG001 RoHS Compliant
Figure 2. Recommended Bias Configuration mounting screw torque requirements. well controlled and electric static discharge (ESD) safe.
- Application Notes are available upon request.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Rev — Advance Datasheet MAAP-000076-PKG001 RoHS Compliant
Figure 3. MAAP-000076-PKG001 Evaluation Board