MAAL-008091-000000

MAAL-008091 MACOM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Features

• Low Noise Figure: 1.2 dB
• High Input IP3: +18 dBm at 8 V, 60 mA bias +6.5 dBm at 3 V, 20 mA bias
• High Gain: 15 dB
• Single Supply: +3 to +8 VDC
• Adjustable current: 20 to 80 mA with external resistor
• Lead-Free SOIC-8 Package
• 100% Matte Tin Plating over Copper
• Halogen-Free “Green” Mold Compound
• 260°C Reflow Compatible
• RoHS* Compliant Version of AM50-0003

Description

M/A-COM’s MAAL-008091 is a high dynamic range, GaAs MMIC, low noise amplifier in a lead-free SOIC-8, surface mount plastic package. It employs external input matching to obtain optimum noise figure performance and operating frequency flexibility. The MAAL-008091 also features flexible biasing to control the current consumption vs. dynamic range trade-off. The MAAL-008091 can operate from any supply voltage in the 3 V to 8 V range. Its current can be controlled over a range of 20 mA to 80 mA with an external resistor. The MAAL-008091 is ideally suited for use where low noise figure, high gain, high dynamic range, and low power consumption are required. Typical applications include receiver front ends in AMPS, GSM, and ETACS base stations. It is also useful as a gain block, buffer, driver, and IF amplifier in both fixed and portable cellular and 900 MHz ISM systems. The MAAL-008091 is fabricated using a low-cost 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability. Pin Configuration Pin No. Pin Name Description

1 GND RF and DC Ground

2 REXT External Current Control (optional)

3 RFIN RF Input of the amplifier

4 GND RF and DC Ground

5 GND RF and DC Ground

6 RFOUT RF Output of the amplifier

7 VDD Positive supply voltage

8 GND RF and DC Ground

MAAL-008091-000000 Bulk Packaging MAAL-008091-TR3000 3000 piece reel 1. Reference Application Note M513 for reel size information. Functional Block Diagram * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

High Dynamic Range Low Noise Amplifier 800 - 1000 MHz MAAL-008091 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Electrical Specifications: TA = +25°C, F = 900 MHz, PIN= -30 dBm, Z0 = 50 Ω Parameter Test Conditions Units Min. Typ. Max. Gain 5 V, 60 mA 2

3 V, 20 mA

13.5 Noise Figure 5 V, 60 mA 2 1.20 1.25 1.50 1.50 Input VSWR — Ratio — 2.0:1 — Output VSWR — Ratio — 1.5:1 — Output 1 dB Compression 5 V, 60 mA 2 16.5 8.5 Input IP3 5 V, 60 mA 2 12.5 4.0 6.5 Reverse Isolation — dB — 25 — 2. Using external 15 Ω resistor. See functional schematic. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Absolute Maximum Ratings 3,4 Parameter Absolute Maximum VDD +10 VDC Input Power +10 dBm Current5 120 mA Channel Temperature6 +150°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. M/A-COM does not recommend sustained operation near these survivability limits. 5. When pin #2 is used to increase current (see note 8). 6. Thermal resistance ( θjc) = +88°C/W.

High Dynamic Range Low Noise Amplifier 800 - 1000 MHz MAAL-008091 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Typical Performance Curves Test Conditions: TA = +25°C, Z0 = 50 Ω, VDD = 5 V, IDD = 60 mA unless otherwise specified. VSWR vs. Frequency Gain vs. Frequency Noise Figure vs. Frequency Output P1dB vs. Frequency Noise Figure vs. Current, F = 900 MHz Output P1dB vs. Current, F = 900 MHz 0.5 0.7 0.9 1.1 3 V 5 V 8 V Frequency (GHz) 0.5 0.7 0.9 1.1 INPUT OUTPUT Frequency (GHz) 1.0 1.1 1.2 1.3 1.4 Frequency (GHz) V DD = 3 V to 8 V 1.0 1.1 1.2 1.3 1.4 20 40 60 80 I DD (mA) V DD = 3 V to 8 V 3 V 5 V 6 V 8 V Frequency (GHz) 20 40 60 80 3 V 5 V 6 V 8 V I DD (mA)

High Dynamic Range Low Noise Amplifier 800 - 1000 MHz MAAL-008091 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Input IP3 vs. Current, F = 900 MHz Input IP3 vs. Frequency Typical Performance Curves Test Conditions: TA = +25°C, Z0 = 50 Ω, VDD = 5 V, IDD = 60 mA unless otherwise specified. Lead-Free SOIC-8† 3 V 5 V 6 V 8 V Frequency (GHz) 20 40 60 80 3 V 5 V 6 V 8 V I DD (mA) † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Additional information is available in Application Note M540, “M/A-COM GaAs MMIC LNA SOIC-8 Platform”.

High Dynamic Range Low Noise Amplifier 800 - 1000 MHz MAAL-008091 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Recommended PCB Configuration Functional Schematic External Component List 7 Part Value Case Size Manufacturer Purpose C1 47 pF 0603 Murata DC Block C2 470 pF 0603 Murata By-Pass L1 12 nH 0603 Coilcraft Tuning L2 12 nH 0603 Coilcraft RF Choke R1 5.1 K Ω 0603 Panasonic DC Return R2 See Note 8 0603 Panasonic Optional current control 7. All external components are r eadily available, low cost surface mount components. 8. Pin 2 allows use of an external resistor to ground for optional, higher current. For 20 mA operation, no resistor is used. For I DD ~ 40 mA, R2 = 43 ohms; I DD ~ 60 mA, R2 = 15 ohms; I DD ~ 80 mA, R2 = 10 ohms. Cross Section View The PCB dielectric between RF traces and RF ground layers should be chosen to reduce RF discontinuities between 50 Ω lines and package pins. M/A-COM recommends an FR-4 dielectric thickness of 0.008” (0.20 mm) yielding a 50 Ω line width of 0.015” (0.38 mm). The recommended RF metalization is 1 ounce copper.