MA7026 MPOWER | Alldatasheet
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Technical content
Single Output Hall Effect Latch ❖ GENERAL DESCRIPTION MA7026 is an integrated Hall effect latched sensor designed for electronic commutation of brush -less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator f or magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and open-collector output. An internal band-gap regulator is used to provide temperature compensated supply voltage for internal circuits and allows a wide operating supply range. If a magnetic flux density larger than threshold Bop, OUT is turned on(low). The output state is held until a magnetic flux density reversal falls below Brp causing OUT to be turned off (high). ❖ FEATURES - 2.5V to 26V DC Operation Voltage - Temperature Compensation - Wide Operating Voltage Range - Pre-drive with Internal Pull-up Resistor - 25mA Maximum Sinking Output Current - Packages: SOT23-3L, SIP-3L (TO-92S), SOT553 ❖ PIN ASSIGNMENT The packages of MA7026 are shown as below, the pin assignment is given by: VDD OUT (Top View) GND VDD GND OUT (Top View) SIP-3L SOT23-3L 2 3 OUT GNDNC VDD SOT553 NC Name Description VDD Supply Voltage OUT Output GND Ground.
❖ TEST CIRCUIT MA7026 OUT GND VDD 100nF Note: C1 is for power stabilization and to strengthen the noise immunity. RL is the pull-up resistor. ❖ ORDER / MARKING INFORMATION Order Information (SIP) Top Marking (SIP-3L) Device Name MA7026 Packing XXX Blank:BagP3: SIP-3L YYWWX
7026 Part number
ID code:internal WW:01~52 Year:19=2019 Order Information (SOT) Top Marking (SOT) Device Name MA7026 Packing A : Taping XXX Blank:BagA :SOT23-3L B553:SOT553 W: 01~26(A~Z) 27~52(a~z) Y: 9 = 2019 X: InternalSOT553 HqYW SOT23 HqYWX ❖ ABSOLUTE MAXIMUM RATINGS (at TA=25°C) Characteristics Symbol Rating Unit Supply Voltage VDD 28 V Reverse VDD Polarity Voltage VRDD -30 V Magnetic Flux Density B Unlimited Gauss Output Current Continuous IO 25 mA Power Dissipation (SIP3 /SOT23, SOT553) PD 550/230 mW Storage Temperature Range TSTG -65 to +150 °C Thermal Resistance from Junction to Case (SIP3 /SOT) θJC 49/410 °C/W Thermal Resistance from Junction to Ambient (SIP3 /SOT) θJA 227/543 °C/W Junction Temperature TJ 150 °C Operating Temperature TO -40 to 125 °C Magnetic Signal Input Frequency (Note1) Fsw 0~5 KHz Note1: Not subject to production test, verified by design/characterization.