MA40053 MACOM | Alldatasheet
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v2.00 Features Case Styles (See appendix for complete dimen- © Wide Selection of Packages for Stripline, Coaxial and sions) Waveguide Detectors © Chip Diodes Available 7 — 2 i=) © Both P and N Type Diodes 54 © Excellent Sensitivity Through Ka-Band © Low 1/F Noise
Description
This family of low capacitance Schottky diodes is 119 120 a designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have low junction capacitance and repeatable video impedance. These diodes are available in a wide range of ceramic, stripline and axial lead packages and as bond- ° ° ° ° able chips. Both P and N type diodes are offered. ° ° . ° ° ° °
Applications
Detectors and power monitors in stripline, coaxial and 135 135A waveguide circuits through 40 GHz. 137 —_— a 186 ax Yaa 276 Specifications Subject to Change Without Notice. MWA-COM, Inc, 22eators Stion io Change WHOM NR 589 “North America: Tel. (800) 366-2266 = Asia/Pacific: Tel. +81 (03) 3226-1671 = Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
2.00 Maximum Ratings Temperature Ratings Storage Operating Temperature 65°C to +150°C (Case styles $4, 119, 120, 135, 135A, 186, 276) 65°C to +125°C (Case styles 137, 213) Power Ratings at 25°C Maximum Peak Incident RF Power ‘S-X Band 1 Watt-1 microsecond | maximum pulse length | Ku-K Band 0.5W-1 microsecond maximum pulse length Maximum CW RF Power S-X Band 150 mW (maximum) Derate Linearly to Zero at 150°C Ku-K band 100 mW (maximum) ‘Solder Temperature Ratings For case styles 54, 119, 186, 276 230°C for 5 seconds, 1 mm from package For case style 120 200°C for 5 seconds For case style 137 and 213 150°C for 5 seconds, 1 mm from package Packaged N Type Silicon Schottky Detector Diodes These low barrier packaged detector diodes are suitable for use in stripline, waveguide and coaxial detectors. They feature high sensitiv- ity and low I/f noise. These diodes are listed by increasing test frequency, grouped by packaged style and decreasing Tss. Other case styles than those specified may be available. Specifications @ Ta = +25°C Maximum23 Video Impedence** | Tang. Signal Range Test Frequency Sensitivity Tss Min/Max. (GHz) | (dBm) (k Ohms) moss] PT [_wasooss [eT Tse a [_wasoeor | mT Ts a [__wawoers | mT eT se Te a Notes: 1. Schottky barrier junction diodes are thermocompression bonded in 2. The video amplifier bandwidth is 1 MHz and the nominal amplifier case style 119 and 120. Case style 54 uses pressure contacts. noise figure is 3 dB. DC impedance is 10 k Ohms. The DC bias is 20 ‘The standard case style is given for each model number. Other case pA. styles may be available. 3. RF Power = 30 dBM. The de forward bias is + 20 pA. 4. Measured at the indicated test frequency and at -30 dBm RF power Specifications Subject to Change Without Notice. 560 — M/A-COM, Inc. North America: Tel. (800) 366-2266 = Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
v2.00 N Type Silicon Schottky Detector Diodes These low barrier packaged detector diodes are suitable for use in striping applications. They feature high sensi- tivity, and low I/f noise. These diodes are listed by increasing frequency, and grouped by package style and Tss. Case styles other than those specified may be avail- able. For additional information, contact the factory. Minimum! Video Impedence” Tang. Signal Range Test Frequency Sensitivity Ty Min/Max. (GHz) (dBm) (K Ohms) 7 OS a A a a imesze [oe Packaged P Type Silicon Schottky Detector Diodes This series of low barrier P type detector diodes has good voltage sensitivity and lower 1/f noise than similar capacitance N type Schottky diodes. They are listed by case style. Specifications @ T, = +25°C Minimum! Video Impedance2 Tang. Sig. Range Minimum? Test Frequency Sens. Tss Min/Max. Sensitivity (GHz) (dBm) (Ohms) (mV/mW) a a a [ares [eee Notes: 1. The-video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. The input impedance is 10 k Ohms and DC bias is 20 HA. 2. Pinc = -30 dBM. The DC forward bias is +20 pA. ‘Specifications Subject to Change Without Notice. M/A-COM, Inc, 5-61 _North America: Tel. (800) 366-2266 = Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
v2.00 N Type Silicon Schottky Chip Detector Diodes These low barrier N type chip detector diodes are suitable for use in microstrip applications. They feature sensitivity, and low I/f noise. These diodes are listed by increasing frequency. | Minimum Nominal? Nominal4 | Test Nominal?5 Reverse Forward Total Case Frequency Ts Voltage Vp Voltage Capacitance Style (GHz) (4BM) (Volts) (Volts) (pF) MA40220 135 10.0 0.12 MaA40222 135 16.0 0.09 P Type Silicon Schottky Chip Detector Diodes These low barrier P type chip detector diodes are suitable for use in microstrip or stripline circuits. These diodes are listed by increasing test frequency. Specifications @ Ta = 25°C Minimum? Nominal? Nominal* Test Reverse Nominal'.S Forward Total Case Frequency Voltage Vp, Tss, Voltage Capacitance Style (GHz) (Volts) (dBM) (Volts) (pF) maao270 10.0 40 0.4 0.12 maao272 16.0 40 0.4 0.09 Notes: 1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. Impedance is 10 k Ohms and DC bias is +20 pA. Wafers are evaluated - on a sample basis for Tgs. 2. Voltage rating is measured at 10 VA reverse bias current. 3. Forward voltage is measured at a forward current of 1 mA. 4, Capacitance is measured at 0 V and 1 MHz. 5. RF power = -30 dBm. The DC forward bias is +20 pA. Measured at the indicated test frequency and at -30 dBm RF power with Ri, = 10 k Ohms and DC forward bias +20 pA. Specifications Subject to Change Without Notice. North America: Tel. (800) 366-2266 = Asia/Pacific: Tel. +81 (03) 3226-1671 w Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
V 2.00 Typical Performance Curves NOMINAL OUTPUT VOLTAGE AT X-BAND NOMINAL OUTPUT VOLTAGE AT X-BAND (WITH FORWARD BIAS) (WITH ZERO BIAS) 1 00 pap aap 10,000 pay SSSSSSSS7= ———— aa ee ee
109 Panny 1A 5 1000fp Ls ea
i = = Se — ===> > SS < At g PrN oe a aR 5 soot AZ ried] rl | | 77 7 Yr = t0Kn_] y t 3 we AZ FREQ,» 2.375 GH = 3 100) (Il A4ZAZ FREQ. -9276 Gite SS Se = —— i coupe = SS . tH torr rie Atm CINE) At ison ra Ain LINE} on LT TT No TUNING sol7 Ad LL NO,TUNING |] 50 ~45 —40 -35 —30 -25 -20-15 -10 -5 CJ 40-36 -30 -25 -20 -15-10 -5 0 5 10 INPUT POWER (dBm) INPUT POWER (dBm) NOMINAL TANGENTIAL SIGNAL SENSITIVITY vs FREQUENCY iNT > 6 = PCN | E ss NS tT TTT AN zs IS ERE REEEE 3 0 SS EREREEEE PICT TTT r 30! 4 6 8 0 12 4 6 8 2 FREQUENCY (GHz) NOMINAL TANGENTIAL SIGNAL EN’ SENSITIVITY vs BIAS CURRENT AT X-BAND NOMINAL VIDEO IMPEDANCE vs BIAS CURRENT - aes \\ roo at =} — z 58) ¢ - ST PCN easiest mma 3 alt NIN J T || 5 ee ied i RIV § Cons oi 3 | NX aa 2 US 2 fade | PN Pe maiiiiaseiiiiimassuiil 5 af 2 TINS TI ied = Sass Serie eee. gs CET Ti Sri See Ser ef [LTT i tt TN PA oe 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 BIAS CURRENT (A) BIAS CURRENT (uA) Specifications Subject to Change Without Notice. WA-COM, Inc, 5-63 North America: Tel. (800) 366-2266 = Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020