MA22D23 PANASONIC | Alldatasheet
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Schottky Barrier Diodes (SBD) 1Publication date: October 2003 SKH00127AED MA22D23 Silicon epitaxial planar type For high frequency rectification ■ Features
- IF(AV) = 1 A rectification is possible.
- High IFSM (IFSM = 30 A)
- Small reverse current I R. ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage V R 25 V Repetitive peak reverse voltage V RRM 25 V Forward current (Average) *1 IF(AV) 1.0 A Non-repetitive peak forward I FSM 30 A surge current *2 Junction temperature T j 150 °C Storage temperature T stg −55 to +125 °C Parameter Symbol Conditions Min Typ Max Unit Reverse current I R1 VR = 15 V 1.5 20 µA IR2 VR = 20 V 2.5 40 Forward voltage V F1 IF = 0.5 A 0.41 0.46 V VF2 IF = 1.0 A 0.44 0.53 Terminal capacitance C t VR = 10 V, f = 1 MHz 45 pF ■ Electrical Characteristics Ta = 25°C ± 3°C Marking Symbol: 3W Unit: mm 1.6±0.1 0.80±0.05 0.55±0.1 0.16+0.1 –0.06 3.5±0.1 2.6±0.1 0.45±0.1 0 to 0.1 0 to 0.3 0 to 0.1 Note) 1. Measuring methods are based on J APANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 1: Anode 2: Cathode Mini2-F1 Package Note) *1: Mounted on a alumina PC board *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) 90% tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA RL = 100 Ω 10% Input Pulse Output Pulse Irr = 10 mA tr tp trrIF t t Bias Application Unit (N-50BU) Pulse Generator (PG-10N) R s = 50 Ω Wave Form Analyzer (SAS-8130) R i = 50 Ω VR A
IF VF IR VR 10−3 10−2 10−1 102 104 105 103 Forward voltage VF (V) Forward current IF (mA) Ta = 150°C 75°C 25°C −20°C 125°C 10−2 10−3 0 5 10 25 2015 30 10−1 102 103 104 Reverse voltage VR (V) Reverse current IR (µA) Ta = 150°C 125°C 75°C 25°C −20°C
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