MA21D38 PANASONIC | Alldatasheet
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Schottky Barrier Diodes (SBD) Publication date: November 2004 SKH00138BED 1 MA21D38 Silicon epitaxial planar type For high frequency rectification ■ Features IF(A V) = 1 A rectification is possible Low forward voltag VF High non-repetitive peak forward surge voltage ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage VR 30 V Maximum peak reverse voltage VRM 30 V Forward current (Average) IF(A V) 1.0 A Non-repetitive peak forward surge current * IFSM 20 A Junction temperature Tj 125 °C Storage time Tstg –55 to +125 °C Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF1 IF = 0.5 A 0.34 0.38 V VF2 IF = 0.7 A 0.36 0.40 VF3 IF = 1.0 A 0.38 0.42 Reverse current IR VR = 30 V 100 µA Terminal capacitance Ct VR = 10 V , f = 1 MHz 40 pF Reverse recovery time * trr IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω 13 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *: trr measurement circuit Bias Application Unit (N-50BU) 90% Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = IR = 100 mA RL = 100 Ω 10% Irr = 10 mA tr tp trr VR IF t t A Input Pulse Output Pulse 1.25±0.10 0.60±0.10 1.45±0.20 0 to 0.1 0 to 0.15 0.16 +0.1 –0.060.80±0.10 +0.02 –0.030.58 1.90±0.100.30±0.10 2.50±0.10 Unit: mm 1: Anode 2: Cathode SMini2-F2 Package Marking Symbol: 3U
2 SKH00138BED
IF VF IR VR Ct VR PR(A V) VR PF(A V) IF(A V) IF(A V) Ta Rth t 10−2 0 0.4 0.8 1.2 10−1 104 103 102 Forward voltage VF (V) MA21D38_IF-VF Forward current IF (mA) Ta = 150°C 100°C 75°C 25°C −20°C 0 5 10 15 20 25 30 Reverse voltage VR (V) Reverse current IR (µA) 10−1 102 105 104 103 Ta = 150°C 125°C 75°C 25°C −20°C MA21D38_IR-VR 200 400 600 0 10 20 3 0 Reverse voltage VR (V) Terminal capacitance Ct (pF) MA21D38_Ct-VR Ta = 25°C f = 1 MHz 0.2 0.4 0.6 0 0.4 0.8 1.2 1.6 MA21D38_PF(AV)-IF(AV) DC 0.5 0.2 0.1 IF tp T Forward current (Average) IF(AV) (mA) Forward power dissipation (Average) PF(AV) (W) 0.4 0.8 1.2 0 40 8 0 120 160 MA21D38_IF(AV)-Ta DC tp / T 0.5 0.2 0.1 I tp Tj = 125°C VR = 5 V Alumina board Copper foil 2.0 × 2.0 mm T Ambient temperature Ta (°C) Forward current (Average) IF(AV) (A) 10−1 10−3 110−110−2 10 102 103 103 102 Time t (s) MA21D38_Rth-t Thermal resistance Rth (°C/W) Ta = 25°C Alumina board Copper foil 2.0 × 2.0 mm 1 000 2 000 3 000 0 10 20 30 4 0 MA21D38_PR(AV)-VR DC 0.9 0.8 0.5 I tp T Reverse voltage VR (V) Reverse power dissipation (Average) PR(AV) (mW)
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