MA198 PANASONIC | Alldatasheet

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1Publication date: February 2005 SKF00041DED MA3X198 (MA198) Silicon epitaxial planar type For wave detection ■ Features

  • Two elements contained in one package, allowing high-density mounting
  • Soft recovery characteristic (trr = 100 ns) ■ Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Conditions Min Typ Max Unit Forward voltage V F1 IF = 100 µA 0.65 0.72 V VF2 IR = 100 mA 1.2 V Reverse current I R VR = 40 V 10 nA Terminal capacitance C t VR = 6 V, f = 1 MHz 1.0 2.0 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V 100 ns Irr = 0.1 IR, RL = 100 Ω ■ Electrical Characteristics Ta = 25°C ± 3°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 10 MHz. 3. *: trr measurement circuit 0.40+0.10 –0.05 (0.65) 1.50+0.25 –0.05 2.8+0.2 –0.3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 0.16+0.10 –0.06 0.4±0.2 10˚ 0 to 0.1 1.1+0.2 –0.1 1.1+0.3 –0.1 Internal Connection Marking Symbol: M2F 1 2 Parameter Symbol Rating Unit Reverse voltage V R 40 V Repetitive peak reverse voltage VRRM 40 V Forward current Single I F(AV) 100 mA (Average) Series 75 Repetitive peak Single I FRM 225 mA forward current Series 170 Non-repetitive peak Single I FSM 500 mA forward surge current * Series 325 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Note) *: t = 1 s Bias Application Unit (N-50BU) 90% Pulse Generator (PG-10N) R s = 50 Ω Wave Form Analyzer (SAS-8130) R i = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 10 mA VR = 6 V RL = 100 Ω 10% Input Pulse Output Pulse Irr = 0.1 IR tr tp trr VR IF t t A 1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 EIAJ: SC-59 Mini3-G1 Package Note) The part number in the parenthesis shows conventional part number.

2 SKF00041DED

IF  VF Ct  VR IR  Ta VF  TaIR  VR 10 −2 10 −1 102 103 Forward voltage VF (V) Forward current IF (mA) Ta = 150°C 100°C 25°C − 20°C 0 1 02 03 04 05 06 0 Reverse voltage VR (V) Reverse current IR (nA) 10 −2 10 −1 102 Ta = 150°C 25°C 100°C 0.4 0.8 1.2 1.6 −40 0 40 80 120 160 200 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 100 mA 10 mA 3 mA 10 −2 −40 0 40 80 120 160 200 10 −1 102 Ambient temperature Ta (°C) Reverse current IR (nA) 6 V 1 V VR = 30 V 2.4 2.0 1.6 1.2 0.8 0.4 0 1 02 03 04 05 06 0 Reverse voltage VR (V) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 10 −1 102 103 10110 −1 Pulse width tW (ms) Forward surge current IF(surge) (A) tW Non repetitive IF(surge) Ta = 25°C IF(surge)  tW

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). Consult our sales staff in advance for information on the following applications:

  • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
  • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP