MA194 PANASONIC | Alldatasheet
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MA4X194 (MA194) Silicon epitaxial planar type For switching circuits I Features
- Short reverse recovery time trr
- Two isolated elements contained in one package, allowing high- density mounting I Absolute Maximum Ratings Ta = 25°C 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Unit : mm Parameter Symbol Rating Unit Reverse voltage (DC) V R 40 V Repetitive peak reverse voltage VRRM 40 V Average forward Single I F(AV) 100 mA current Double I F(AV) 75 mA/Unit Repetitive peak Single I FRM 225 mA forward current Double I FRM 170 mA/Unit Non-repetitive peak Single I FSM 500 mA forward surge current * Double I FSM 375 mA/Unit Power dissipation P D 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R1 VR = 40 V 10 nA IR2 VR = 35 V, Ta = 150°C1 0 µA Forward voltage (DC) V F IF = 100 mA 0.98 1.2 V Terminal capacitance C t VR = 6 V, f = 1 MHz 1.0 2.0 pF Forward dynamic resistance r f*1 IF = 3 mA, f = 30 MHz 1.7 2.5 Ω rf*2 IF = 3 mA, f = 30 MHz 3.6 Reverse recovery time*3 trr IF = 10 mA, VR = 6 V 100 ns Irr = 0.1 · IR, RL = 100 Ω I Electrical Characteristics Ta = 25°C Internal Connection Marking Symbol: M1F Note) * : t = 1 s Note) * 1 :r f measuring instrument: Nihon Koshuha Model TDC-121A *2 :r f measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER *3 :t rr measuring circuit 2.8 + 0.2 − 0.3 1.5 + 0.25 0.5 R 0.950.95 1.9 ± 0.2 0.6 + 0.1 − 0 1.1 + 0.2 − 0.1 0.8 0.4 ± 0.2 0 to 0.1 0.16 + 0.1 − 0.06 0.4 + 0.1 − 0.05 0.2 0.4 + 0.1 − 0.05 1.45 0.1 to 0.3 0.5 2.9 + 0.2 − 0.05 Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 10 mA VR = 6 V RL = 100 Ω 10% Input Pulse Output Pulse Irr = 0.1 · IR tr tp trr VR IF t t A Note) The part number in the parenthesis shows conventional part number.
IF VF IR Ta VF TaIR VR Ct VR 10−2 10−1 102 103 Forward voltage VF (V) Forward current IF (mA) Ta = 150°C 100°C 25°C – 20°C 10−3 10−2 10−1 102 Reverse voltage VR (V) Reverse current IR (µA) 0 1 02 03 04 05 0 Ta = 150°C 100°C 25°C −40 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 100 mA 10 mA 3 mA 10−3 0 40 80 120 160 10−2 10−1 102 Ambient temperature Ta (°C) Reverse current IR (nA) VR = 30 V 6 V 0.1 0.2 0.3 0.5 0 1 02 03 04 05 0 Reverse voltage VR (V) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C
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