MA2C185 PANASONIC | Alldatasheet
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Technical content
Silicon epitaxial planar type For high-voltage switching circuits, small power rectification I Features
- High reverse voltage (VR = 200 V)
- Large output current IO
- Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole I Absolute Maximum Ratings Ta = 25°C 1: Cathode 2: Anode JEDEC: DO-34 Unit : mm Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 200 V 200 nA Forward voltage (DC) V F IF = 200 mA 1.2 V Reverse voltage (DC) V R IR = 100 µA 250 V Terminal capacitance C t VR = 0 V, f = 1 MHz 4.5 pF I Electrical Characteristics Ta = 25°C Note) Rated input/output frequency: 3 MHz Parameter Symbol Rating Unit Reverse voltage (DC) V R 200 V Repetitive peak reverse voltage VRRM 250 V Output current I O 200 mA Repetitive peak reverse current IFRM 625 mA Non-repetitive peak forward I FSM 1A surge current surge current * Average power dissipation P F(AV) 400 mW Junction temperature T j 175 °C Storage temperature T stg −65 to +175 °C Note) * : t = l s Type No. MA2C185 Color 1st Band White 2nd Band Green I Cathode Indication 1st Band 2nd Band φ 0.45 max. φ 1.75 max. 13 min. 0.2 max.0.2 max. 13 min. 2.2 ± 0.3 COLORED BAND INDICATES CATHODE
IF VF IR VR IR TaVF Ta 10−2 10−1 102 103 Forward voltage VF (V) Forward current IF (mA) Ta = 150°C 100°C 25°C − 20°C 10−5 10−4 10−3 10−2 10−1 Reverse voltage VR (V) Reverse current IR (µA) 0 40 80 120 160 200 Ta = 150°C 100°C 25°C 10−4 0 20 40 60 80 100 120 140 160 180 10−3 10−2 10−1 Ambient temperature Ta (°C) Reverse current IR (µA) VR = 200 V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 40 80 120 160 200 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 100 mA 10 mA 1 mA