MA162

MA2B150 PANASONIC | Alldatasheet

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Technical content

MA2B150, MA2B161, MA2B162, MA2B162A Silicon epitaxial planar type For switching circuits I Features

• Short reverse recovery time trr
• Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C 1 : Cathode 2 : Anode JEDEC : DO-35 Unit : mm Parameter Symbol Rating Unit Reverse voltage MA2B150 VR 35 V (DC) MA2B161 50 MA2B162 75 MA2B162A 120 Repetitive peak MA2B150 VRRM 35 V reverse voltage MA2B161 50 MA2B162 75 MA2B162A 120 Average forward current I F(AV) 100 mA Repetitive peak forward current IFRM 225 mA Non-repetitive peak forward I FSM 500 mA surge current* Junction temperature T j 200 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) MA2B150 IR VR = 15 V 0.025 µA VR = 30 V 0.1 MA2B161 VR = 15 V 0.025 VR = 50 V 5 MA2B162 VR = 20 V 0.012 0.025 VR = 75 V 5 MA2B162A VR = 20 V 0.012 0.025 VR = 120 V 5 MA2B150 VR = 35 V, Ta = 150°C 100 MA2B161 VR = 50 V, Ta = 150°C 100 MA2B162 VR = 75 V, Ta = 150°C 50 100 MA2B162A VR = 75 V, Ta = 150°C 50 100 Forward voltage (DC) V F IF = 100 mA 0.95 1.2 V Reverse voltage (DC) MA2B150 VR IR = 5 µA3 5 V Terminal capacitance C t VR = 0 V, f = 1 MHz 0.9 2 pF Reverse recovery time* MA2B150 trr IF = 10 mA, VR = 1 V, RL = 100 Ω 10 ns MA2B161/162/162A Measure when Irr = 0.1 · IR 2.2 4 I Electrical Characteristics Ta = 25°C Note) * : t = 1 s Note) 1. Rated input/output frequency:

100 MHz

1. * : t rr measuring circuitType No. MA2B150 MA2B161 MA2B162 MA2B162A Color 1st Band White Green Violet Black I Cathode Indication 24 min.4.5 max.24 min. φ 0.56 max. φ 1.95 max. COLORED BAND INDICATES CATHODE 1st Band 2nd Band

IR  VR IR  VR IF  VF VF  Ta MA2B150, MA2B161, MA2B162, MA2B162A trr measuring circuit IR  Ta IR  Ta Ct  VR 10−2 10−1 102 103 Forward voltage VF (V) Forward current IF (mA) Ta = 150°C 75°C 25°C − 20°C 10−3 10−2 10−1 102 Reverse voltage VR (V) Reverse current IR (µA) 04 0 10 30 20 Ta = 150°C 25°C 100°C MA2B150 10−3 10−2 10−1 102 Reverse voltage VR (V) Reverse current IR (µA) 0 2 04 06 08 0 1 0 0 Ta = 150°C 100°C 25°C MA2B161 MA2B162 MA2B162A 0.2 0.4 0.6 0.8 1.0 −40 0 40 80 120 160 200 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 20 mA 10 mA 1 mA 0.1 mA 0.01 mA 10−3 0 40 80 120 160 200 10−2 10−1 102 Ambient temperature Ta (°C) Reverse current IR (µA) 15 V VR = 35 V MA2B150 0.4 0.8 1.2 1.6 2.0 048 1 2 1 6 2 0 Reverse voltage VR (V) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C MA2B161, MA2B162, MA2B162A MA2B150 10−3 0 40 80 120 160 200 10−2 10−1 102 Ambient temperature Ta (°C) Reverse current IR (µA) MA2B161 MA2B162 MA2B162A VR = 120 V 75 V 50 V 20 V Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 10 mA VR = 6 V RL = 100 Ω 10% Input Pulse Output Pulse Irr = 0.1 · IR tr tp trr VR IF t t A