MA08602FR MACOM | Alldatasheet
Document overview
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Technical content
(14 - 14.5 GHz) Specifications subject to change without notice. 902818 C /onesansinv North America: Tel. (800)366-2266, Fax (800)618-8883 /onesansinv Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 /onesansinv Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information
FEATURES
- = 35.5 dB Typical Small Signal Gain
- = 50 Ω Input/Output Impedance
- = 40 dBm Third Order Intercept Point
- = Flange mount package designed for optimum electrical and thermal performance at Ku-band.
- = Broadband design centered on Ku-band VSAT.
- = Consistent Output Power and Gain makes fixed bias possible. MA0 8602FR Vgg GND RFin Vdd GND Vgg GND RFout GND Vdd DESCRIPTION MAXIMUM RATINGS (TA = -40°C to +70°C unless otherwise noted) Rating Symbol Value Unit DC Drain Supply Voltage V DD 9V Vdc DC Gate Supply Voltage V GG -3V Vdc RF Input Power P IN 4 dBm Junction Temperature T J +150 °C Storage Temperature T STG -50 to +100 °C The MA08602FR is a five stage MMIC power amplifier fabricated on M/A-COM’s Self-Aligned MSAG ® MESFET Process. This product is fully matched to 50 ohms on both the input and the output and can be used as either a driver or an output stage amplifier. Although the broadband design can be used for many applications, it is ideally suited for Ku-band VSAT. ELECTRICAL CHARACTERISTICS VDD=8.0 V, IDQ=550 mA, PIN=-1 dBm, TA=-40°C to +70°C Characteristic Symbol Min Typ Max Unit Frequency ƒ= 14 14.5 GHz Output Power, saturated P SAT 30 30.5 33 dBm Gain, saturated G SAT 31 31.5 34 dB Gain Flatness over band, saturated +/- 0.5 +/- 1.0 dB Input Power (POUT = 30 dBm) P INJ — -4 -1 dBm Drain Current (POUT = 31 dBm) I DS 605 700 mA Gate Bias Voltage (IDQ=550 mA) V GG -2.5 -1.8 -1 V Gate Current (VDD=8.0V, IDQ=550mA, PIN=-1dBm, VDG<10.5V) I GG 1 20 mA Input VSWR 2:1 3:1 Harmonics 2ƒο -25 dBc Noise Figure NF 7 10 dB Third-Order Intercept Point (VDD=8.0 V, IDQ=550 mA,PIN=-1 dBm) IP3 40 dBm Thermal Resistance (Junction of 3rd stage FET to flange) RTH 29 °C/W Small Signal Gain (Pin = -20 dBm) S21 30.5 — 42 dB NOTE: All typical values are at room temperature (25°C)
1W Power Amplifier (14 - 14.5 GHz) MA08602FR Specifications subject to change without notice. 902818 C /onesansinv North America: Tel. (800)366-2266, Fax (800)618-8883 /onesansinv Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 /onesansinv Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information