MA02104AF MACOM | Alldatasheet

Document overview

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Technical content

Features

  • = Single Positive Supply
  • = 16 Pin TSSOP Plastic Package
  • = Class AB Bias
  • = 800 - 1000 MHz Operation
  • = 50Ω Input Impedance
  • = Single Capacitor Output Match
  • = Self-Aligned MSAG®-Lite MESFET Process
  • = Guaranteed Stability and Ruggedness Typical 3.6 Volt Performance 30.8 dBm Power Output 30.8 dB Power Gain 60% Drain Efficiency (output stage FET) 45% Power Added Efficiency -36 dBc 2 nd Harmonic -54 dBc 3rd Harmonic VDD2 GND GND GND RF OUT/VDD3 GND GND N/C VDD1 N/C GND GND RF IN GND GND N/C ELECTRICAL CHARACTERISTICS VDD=3.6 V, PIN=0 dBm, TS=40 °C (Note 1), Output externally matched to 50 Ω System. Characteristic Symbol Min Typical Max Unit Frequency Range ƒ 900 942 MHz Output Power, f = 900 MHz P OUT 30.4 30.9 31.5 dBm Power Added Efficiency , f = 900 MHz η 40 45 % Harmonics 2ƒ o 3ƒo −36 −54 -31 -40 dBc dBc Input VSWR — 1.4:1 2.0:1 — Thermal Resistance (Junction of 3rd stage FET to solder point of pin 13) RTH J-S 47 °C/W Load Mismatch (VDD = 4.6 V, PIN = +3 dBm, VSWR = 8:1) — No Degradation in Power Output Stability (PIN = -15 to +3 dBm, VDD = 3.6, 4.6 V, TS = -40 to +100 °C, Load VSWR = 8:1) — All non-harmonically related outputs more than 60 dB below desired signal Note 1: TS is the temperature measured at the soldering point of pin 13, mounted on 60 mil GETEK evaluation board in a free air condition with ambient room temperature TA=25 °C. The electrical data presented herein was taken with the evaluation board shown in Figures 1 and 6, under room temperature conditions and CW operation, unless otherwise specified.

3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900 MA02104AF Specifications subject to change without notice. 901753 G /onesansinv North America: Tel. (800)366-2266, Fax (800)618-8883 /onesansinv Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 /onesansinv Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Rating Symbol Value Unit DC Supply Voltage (Pins 1, 12, 16) V DD 5 Vdc RF Input Power P IN 4 mW Junction Temperature T J 150 °C Storage Temperature Range T STG -40 to +150 °C

APPLICATION INFORMATION

+VDD (+3.6V) RF OUTPUT C1 C2 N/C N/C N/C 8 9 Figure 1. Evaluation Board Schematic Component layout and printed circuit board drawing for RF IC evaluation board are shown in Figure 6.

Specifications subject to change without notice. Figure 6. Component layout and printed circuit drawing for evaluation board

800 MHz

1000 MHz 915 MHz

Figure 7. Output match impedance (as seen from pin 12)