M8550T SECOS | Alldatasheet
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Technical content
-0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 29-Apr-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE /circle6 Power Dissipation ABSOLUTE MAXIMUM RATINGS (T A = 25° C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage V CBO -40 V Collector to Emitter Voltage V CEO -25 V Emitter to Base Voltage V EBO -6 V Collector Current - Continuous I C -800 mA Collector Power Dissipation P C 625 mW Junction, Storage Temperature T J, T STG 125, -55~125 ° C
ELECTRICAL CHARACTERISTICS
(T A = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -40 - - V I C =100 µA, I E=0 Collector to Emitter Breakdown Voltage V(BR)CEO -25 - - V I C =0.1mA, I B=0 Emitter to Base Breakdown Voltage V (BR)EBO -6 - - V I E=100 µA, I C =0 Collector Cut-Off Current I CBO - - -0.1 µA V CB =-35V, I E=0 Collector Cut-Off Current I CEO - - -0.1 µA V CE =-20V, I B=0 DC Current Gain hFE(1) 45 - - V CE =-1V, I C =-5mA hFE(2) 80 - 400 V CE =-1V, I C =-100mA hFE(3) 40 - - V CE =-1V, I C =-800mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V I C =-800mA, I B=-80mA Base to Emitter Saturation Voltage VBE(sat) - - -1.2 V I C =-800mA, I B=-80mA Transition Frequency f T 80 - - MHz VCE =-6V, I C =-20mA, f=30MHz *Pulse Test ：pulse width 300 µ≦ s, duty cycle ≦ 2%. TO-92 11 11 Emitter 22 22 Base 33 33 Collector A CE F D G H J B
-0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 29-Apr-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES