M8550 YEASHIN | Alldatasheet
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Technical content
http://www.yeashin.com 1 REV.02 20140401 M8550 Plastic-Encapsulate Transistors (PNP)
FEATURES
MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -800 mA P C Collector Power Dissipation 625 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55 ~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR) CBO I C = -100μA, I E =0 -40 V Collector-emitter breakdown voltage V(BR) CEO C = -0.1mA , I B =0 -25 V Emitter-base breakdown voltage V(BR) EBO I E = -100μA, I C =0 -6 V Collector cut-off current I CBO V CB = -35V , I E =0 -0.1 μA Collector cut-off current I CEO V CE = -20V , I B =0 -0.1 μA h FE(1) V CE =-1V, I C =-5mA 45 h FE(2) V CE =-1V, I C =-100mA 80 400 DC current gain h FE(3) V CE =-1V, I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C = -800mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800mA, I B =-80mA -1.2 V Transition frequency f T V CE =-6V, I C = -20mA f=30MHz
150 MHz
*Pulse Test: pulse width ≤ 300µs,duty cycle ≤2%. TO-92 1.EMITTER 2. BASE 3. COLLECTOR CLASSIFICATION OF h FE (2) Rank B C D D3 Range 80-160 120-200 160-300 300-400
http://www.yeashin.com 2 REV.02 20140401 M8550 DEVICE CHARACTERISTICS -0.1 -1 -10 100 100 150 200 250 300 -1 -10 -100 200 400 600 800 1000 0 25 50 75 100 125 150 100 200 300 400 500 600 700 -1 -10 -100 -200 -400 -600 -800 -1000 -1 -10 -100 -50 -100 -150 -200 -250 -300 -50 -100 -150 -200 -250 f=1MHz I E =0 / I C T a =25 o C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) V CB / V EB C ob / C ib C ib C ob -20 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =-6V T a =25 o C I C f T -800 V CE = -1V T a =100 o C T a =25 o C COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE I C h FE COLLECTOR POWER DISSIPATION P c (mW) AMBIENT TEMPERATURE T a ( ) P c —— T a 625 -800 COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) T a =25 T a =100 β=10 I C V BEsat -800 T a =25 T a =100 β=10 V CEsat —— I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) COMMON EMITTER T a =25 -800uA -720uA -640uA -560uA -480uA -400uA -320uA -240uA -160uA I B =-80uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic