M8550 LUGUANG | Alldatasheet
Document overview
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Technical content
Silicon Epitaxial Planar Transistor M8550
FEATURES
z High Collector Current.(I C = -800Ma). z Complementary To M8050. z Excellent H FE Linearity.
APPLICATIONS
z H i g h C o l l e c t o r C u r r e n t .
ORDERING INFORMATION
Type No. Marking Package Code M8550 Y21 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -800 mA P C Collector Dissipation 200 mW T T stg Junction and Storage Temperature -55 to +150 ℃ http://www.lgesemi .com mai l:lge@lgesemi.comRevision:20170701-P1
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-0.1mA,I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA,I C =0 -6 V Collector cut-off current I CBO V CB =-35V,I E =0 -0.1 μA Collector cut-off current I CEO V CE =-20V,I B =0 -0.1 μA V CE =-1V,I C =-5mA 45 V CE =-1V,I C =-100mA 85 300 DC current gain h FE V CE =-1V,I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C =-800 mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800 mA, I B =-80mA -1.2 V Transition frequency f T V CE =-6V, I C = -20mA f=30MHz 150 MHz CLASSIFICATION OF h FE(1) Rank L H Range 85-200 200-300 SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G