M8550 DGNJDZ | Alldatasheet
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Technical content
M8550 TRANSISTOR(PNP)
FEATURES
MARKING: Y21 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) P a r a m e t e r Symbol T est condi tions Min Max Unit Collector-base breakdown voltage V(BR) CBO I C = -100μA , I E =0 -40 V Collector-emitter breakdown voltage V(BR) CEO * I C = -1mA , I B =0 -25 V Emitter-base breakdown voltage V(BR) EBO I E = -100μA,I C =0 -6 V Collector cut-off current I CBO V CB = -35V , I E =0 -0.1 μA Collector cut-off current I CEO V CE = -20V , I B =0 -0.1 μA h FE(1) V CE =-1V, I C =-5mA 45 h FE(2) V CE =-1V, I C =-100mA 85 400 DC current gain h FE(3) V CE =-1V, I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C = -800mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800mA, I B =-80mA -1.2 V Transition frequency f T V CE =-6V, I C = -20mA f=30MHz
150 MHz
- Pulse Test :pulse width ≤ 300µs , duty cycle ≤2%. CLASSIFICATION OF h FE(2) Rank L H Range 85-300 300-400 SOT-23 BASE EMITTER COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -800 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55～+150 ℃ DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
-10 -100 100 1000 -50 -100 -150 -200 -250 -300 -0.1 -1 -10 100 -10 -100 100 1000 0 25 50 75 100 125 150 100 150 200 250 -1 -10 -100 -10 -100 -1000 -1 -10 -100 -0.1 -0.1 -10 -100 I C COMMON EMITTER V CE =-6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) -0.9mA -0.8mA -1mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA I B =-0.1mA COMMON EMITTER T a =25 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) I C h FE V BE I C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) f=1MHz I E =0/ I C T a =25 Static Characteristic -20 C ob C ib -800 V BEsat T a =25 -800 T a =100 COMMON EMITTER V CE =-1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a f T —— P C COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) β=10 T a =100 T a =25 -800 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) V CB / V EB C ob / C ib I C V CEsat —— I C β=10 T a =25 T a =100 -800 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) T a T a COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) COMMON EMITTER V CE =-1V Typical Characteristics Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
Symbol Dimensions In InchesDimensions In Millimeters Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com
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