M8550 DSK | Alldatasheet

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Technical content

Silicon Epitaxial Planar Transistor M8550

FEATURES

z High Collector Current.(I C = -800mA） z Complementary To M8050. z Excellent H FE Linearity.

APPLICATIONS

z H i g h C o l l e c t o r C u r r e n t . SOT-23

ORDERING INFORMATION

Type No. Marking Package Code M 8 5 5 0 Y 2 1 S O T - 2 3 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -800 mA P C Collector Dissipation 200 mW T T stg Junction and Storage Temperature -55~150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr

Silicon Epitaxial Planar Transistor M8550

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-0.1mA,I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA,I C =0 -6 V Collector cut-off current I CBO V CB =-35V,I E =0 -0.1 μA Collector cut-off current I CEO V CE =-20V,I B =0 -0.1 μA V CE =-1V,I C =-5mA 45 V CE =-1V,I C =-100mA 85 300 DC current gain h FE V CE =-1V,I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C =-800 mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800 mA, I B =-80mA -1.2 V Transition frequency f T V CE =-6V, I C = -20mA f=30MHz 150 MHz CLASSIFICATION OF h FE(1) Rank L H Range 85-200 200-300 www.diode.kr Diode Semiconductor Korea

Silicon Epitaxial Planar Transistor M8550 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOLDERING FOOTPRINT U n i t : m m

PACKAGE INFORMATION

A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J 0.1Typical K 2.35 2.45 All Dimensions in mm Device Package Shipping M8550 SOT-23 3000/Tape&Reel www.diode.kr Diode Semiconductor Korea