M8050T SECOS | Alldatasheet
Document overview
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Technical content
40V , 0.8A NPN Plastic Encapsulate Transistor Elektronische Bauelemente 29-Jan-2013 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Power dissipation MAXIMUM RATINGS (TA=25° C unless otherwise specified) Parameter Symbol Rating Unit Collector - Base Voltage V CBO 40 V Collector - Emitter Voltage V CEO 25 V Emitter - Base Voltage V EBO 6 V Collector Current - Continuous I C 0.8 A Collector Power Dissipation PC 625 mW Junction, Storage Temperature T J, T STG 125, -55~150 ° C
ELECTRICAL CHARACTERISTICS
(TA=25 °C unless otherwise specified) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage IC =100µA, I E =0 V (BR)CBO 40 - - V Collector-Emitter Breakdown Voltage 1 I C =1mA, I B =0 V (BR)CEO 25 - - V Emitter-Base Breakdown Voltage I E =100µA, I C =0 V (BR)EBO 6 - - V Collector Cut-Off Current V CB =35V, I E=0 I CBO - - 0.1 µA Emitter Cut-Off Current V CE =20V, I B=0 I CEO - - 0.1 µA DC Current Gain VCE =1V, I C =5mA h FE1 45 - - VCE =1V, I C =100mA h FE2 80 - 400 VCE =1V, I C =800mA h FE3 40 - - Collector-Emitter Saturation Voltage IC =800mA, I B=80mA V CE(sat) - - 0.5 V Base-Emitter Saturation Voltage IC =800mA, I B=80mA V BE(sat) - - 1.2 V Transition frequency V CE =6V, I C =20mA, f=30MHz f T 150 - - MHz Note: 1. Pulse test ：pulse width 300 S, duty cycle 2%.≦ ≦ ≦ REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.70 F 0.30 0.51 B 4.30 4.70 G 1.27 TYP. C 12.70 - H 1. 10 1.40 D 3.30 3.81 J 2.42 2.66 E 0.36 0.56 K 0.36 0.76 11 11 Emitter 22 22 Base 33 33 Collector TO -92