M8050 YEASHIN | Alldatasheet
Document overview
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Technical content
http://www.yeashin.com 1 REV.02 20120705 M8050 TRANSISTOR (NPN)
FEATURES
MAXIMUM RATINGS (T A =25 unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 800 mA P C Collector Power Dissipation 625 mW T J Junction Temperature 125 ℃ T stg Storage Temperature -55-125 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = 100μA,I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO* I C = 1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E = 100μA, I C =0 6 V Collector cut-off current I CBO V CB = 35V, I E =0 0.1 μA Collector cut-off current I CEO V CE = 20V, I B =0 0.1 μA h FE(1) V CE =1V, I C = 5 m A 4 5 h FE(2) V CE =1V, I C =100mA 80 400 DC current gain h FE(3) V CE =1V, I C =800mA 40 Collector-emitter saturation voltage V CE(sat) I C = 800mA, I B =80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B = 80mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA , f=30MHz
150 MHz
- Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%. TO-92 1.EMITTER 2. BASE 3. COLLECTOR
http://www.yeashin.com 2 REV.02 20120705 M8050 DEVICE CHARACTERISTICS
http://www.yeashin.com 3 REV.02 20120705 M8050 PACKAGE OUTLINE & DIMENSIONS TO−92 .152 MAX.(3.86) .185(4.7) .173(4.4) .135(3.43) MIN. .050(1.27) TYP. .063(1.60) .012(0.30)DP .020(0.51) .014(0.36) R .008(R 0.20) Unit: inch ( mm ) .055(1.4) .043(1.1)