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Technical content
40V , 0.8A, 200mW NPN Plastic Encapsulate Transistor 27-Jun-2012 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Power dissipation MARKING Product Marking Code M8050 Y11
PACKAGE INFORMATION
CLASSIFICATION OF hFE(2) Product-Rank M8050-L Range 80-300 MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector - Base Voltage V CBO 40 V Collector - Emitter Voltage V CEO 25 V Emitter - Base Voltage V EBO 6 V Collector Current - Continuous I C 0.8 A Collector Power Dissipation PC 0.2 W Junction, Storage Temperature T J, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage I C =100µA, IE =0 V (BR)CBO 40 - - V Collector-Emitter Breakdown Voltage1 I C =1mA, IB =0 V (BR)CEO 25 - - V Emitter-Base Breakdown Voltage I E =100µA, IC =0 V (BR)EBO 6 - - V Collector Cut-Off Current V CB=35V, IE=0 I CBO - - 0.1 µA Emitter Cut-Off Current V CE=20V, IB=0 I CEO - - 0.1 µA VCE=1V, IC=5mA h FE1 45 - - VCE=1V, IC=100mA h FE2 80 - 300 DC Current Gain VCE=1V, IC=800mA h FE3 40 - - Collector-Emitter Saturation Voltage I C=800mA, IB=80mA V CE(sat) - - 0.5 V Base-Emitter Saturation Voltage I C=800mA, IB=80mA V BE(sat) - - 1.2 V Transition frequency V CE=6V, IC=20mA, f=30MHz f T 150 - - MHz Note: 1. Pulse test ：pulse width 300 S, duty cycle 2%.≦ ≦ SOT-23 A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 Top View A L C B D G H JF K E 1 2
40V , 0.8A, 200mW NPN Plastic Encapsulate Transistor 27-Jun-2012 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES