M8050 DGNJDZ | Alldatasheet
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Technical content
TRANSISTOR (NPN)
FEATURES
MARKING: Y11 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) P a r a me t e r Symbol Test conditions Min M ax Unit Collector-base breakdown voltage V(BR) CBO I C =100μA, I E =0 40 V Collector-emitter breakdown voltage V(BR) CEO * I C =1mA , I B =0 25 V Emitter-base breakdown voltage V(BR) EBO I E =100μA, I C =0 6 V Collector cut-off current I CBO V CB = 35V, I E =0 0.1 μA Collector cut-off current I CEO V CE = 20V, I B =0 0.1 μA h FE(1) V CE =1V, I C = 5 m A 45 h FE(2) V CE =1V, I C =100mA 80 400 DC current gain h FE(3) V CE =1V, I C =800mA 40 Collector-emitter saturation voltage V CE(sat) I C = 800mA, I B =80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B = 80mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA , f=30MHz
150 MHz
- Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%. CLASSIFICATION OF h FE(2) Rank L H Range 80-300 300-400 SOT-23 BASE EMITTER COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 800 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55～+150 DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
0.1 1 10 100 11 0 100 1000 1 10 100 1000 100 1000 012345 100 200 300 400 0.1 1 10 100 1000 200 400 600 800 1000 1200 1 10 100 1000 100 1000 AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (mW) P C — — T a C ob C ib f=1MHz I E =0 / I C T a =25 V CB / V EB C ob / C ib CAPACITANCE C (pF) REVERSE BIAS VOLTAGE V (V) TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =6V T a =25 I C f T I C h FE DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =25 T a =100 COMMON EMITTER V CE =1V 640uA 800uA 720uA 560uA 480uA 400uA 320uA 240uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic 160uA I B =80uA COMMON EMITTER T a =25 COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) T a =25 T a =100 β=10 I C V BEsat β=10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) T a =100 T a Typical Characteristics Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
Symbol Dimensions In InchesDimensions In Millimeters Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com
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