M8050 BYTESONIC | Alldatasheet
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SOT-23 Plastic-EncapsulateTransistors(NPN) Marking: Y11 ComplementarytoM8550 Power Dissipationof300mW HighStabilityandHighReliability Mechanical Data SOT-23SmallOutlinePlastic Package EpoxyUL:94V-0 MountingPosition:Any Maximum Ratings & Thermal Characteristics (Ratingsat 25℃ambient temperature unlessotherwise specified.) Parameters Symbol V alue U nit Collector-BaseVoltage VCBO 40 V Collector-EmitterVoltage VCEO 25 V Emitter-BaseVoltage VEBO 6 V CollectorCurrent-Continuous IC 800 mA CollectorPower Dissipation PC 300 mW JunctionT emperature Tj 150 ℃ StorageTemperature Tstg -55-+150 ℃ Thermal resistanceFromjunctionto ambient RθJA 417 ℃/W Electrical Characteristics (Ratingsat25℃ ambienttemperature unlesso therwisespecified). Parameter Symbols Test Condition Limits UnitMin M ax Collector-base breakdown voltage V(BR)CBO IC=100uA,IE=0 40 V Collector-emitterbreakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-basebreakdown voltage V(BR)EBO IE=100uA,IC=0 6 V Collectorcut-off current ICBO VCB=35V, IE=0 100 nA Collectorcut-off current ICEO VCE=20V, IB=0 100 nA DC currentgain hFE(1) VCE=1V,IC=5mA 45 hFE(2) VCE=1V,IC=100mA 80 400 hFE(3) VCE=1V,IC=800mA 40 Collector-emittersaturationvoltage VCE(sat) IC=800mA, IB=80mA 0.50 V Base-emittersaturation voltage VBE(sat) IC=800mA, IB=80mA 1.20 V Transition frequency fT VCE=6V,IC=20mA,f=30MHz 1 50 MHz CLASSIFICATION OF hFE(2) RANK L H J RANGE 80-200 200-350 300-400 o V ersion 1.0 2018/7/19 http://www.bytesonic.com.tw/ A ll data sheet.com
V ersion 1.0 2018/7/19 http://www.bytesonic.com.tw/ A ll data sheet.com
SOT-23 PACKAGE OUTLINEPlastic surface mounted package 焊盘设计参考Precautions:PCB Design RecommendedlanddimensionsforSOT-23 diode.Electrodepatternsfor PCBs V ersion 1.0 2018/7/19 http://www.bytesonic.com.tw/ A ll data sheet.com