M74HC08_V01 STM | Alldatasheet

Document overview

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  • PDF pages: 15

Technical content

Datasheet sections

  • 1 Pin information
  • 2 Functional description
  • 3 Electrical characteristics
  • 4 Package information
  • 4.1 SO14 package information
  • 4.2 TSSOP14 package information
  • 5 Revision history

Features

  • High speed: tPD = 7 ns (typ.) at VCC = 6 V
  • Low power dissipation: ICC = 1 µA (max.) at TA = 25 °C
  • High noise immunity: VNIH = VNIL = 28 % VCC (min.)
  • Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
  • Balanced propagation delays: tPLH ~= tPHL
  • Wide operating voltage range: VCC (OPR) =

2 V to 6 V

  • Pin and function compatible with 74 series
  • ESD performance − CDM: 1 kV − HBM: 2 kV − MM: 200 V

Description

The M74HC08 is a high-speed CMOS quad dual- input and gate fabricated with silicon gate C2MOS technology. The internal circuit is composed of two stages including a buffer output which enables high noise immunity and stable output. All inputs are equipped with protection circuits to guard against static discharge and transient excess voltage. Table 1: Device summary Order code Temperature range Package Packaging Marking M74HC08YRM13TR(1) -40 °C to +125 °C SO14 (automotive grade)1 Tape and reel 74HC08Y M74HC08RM13TR -55 °C to +125 °C SO14 Tape and reel 74HC08 M74HC08TTR -55 °C to +125 °C TSSOP14 Tape and reel HC08 M74HC08YTTR1 -40 °C to +125 °C TSSOP14 (automotive grade)1 Tape and reel HC08Y Notes: (1)Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001 and Q002 or equivalent. TSSOP14SOP14 This is information on a product in full production. www.st.com

1 Pin information

Figure 1: Pin connections and IEC logic symbols Table 2: Pin description Pin number Symbol Name and function 1, 4, 9, 12 1A to 4A Data inputs 2, 5, 10, 13 1B to 4B Data inputs 3, 6, 8, 11 1Y to 4Y Data outputs

7 GND Ground (0 V)

14 VCC Positive supply voltage

Functional description M74HC08

2 Functional description

Table 3: Truth table A B Y L L L L H L H L L H H H Figure 2: Input and output equivalent circuit

3 Electrical characteristics

Stressing the device above the ratings listed in the "Absolute maximum ratings" table may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the operating sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 4: Absolute maximum ratings Symbol Parameter Value Unit VCC Supply voltage -0.5 to +7 V VI DC input voltage -0.5 to VCC to +0.5 V VO DC output voltage -0.5 to VCC to +0.5 V IIK DC input diode current ±20 mA IOK DC output diode current ±20 mA IO DC output current ±25 mA ICC or IGND DC VCC or ground current ±50 mA PD Power dissipation 500(1) mW Tstg Storage temperature -65 to +150 °C TL Lead temperature (10 sec.) 300 °C Notes: (1)500 mW at 65 °C; derate to 300 mW by 10 mW/°C from 65 °C to 85 °C Table 5: Recommended operating conditions Symbol Parameter Value Unit VCC Supply voltage 2 to 6 V VI Input voltage 0 to VCC V VO Output voltage 0 to VCC V Top Operating temperature -55 to 125 °C tr, tf Input rise and fall time VCC = 2.0 V 0 to 1000 ns VCC = 4.5 V 0 to 500 ns VCC = 6.0 V 0 to 400 ns

Electrical characteristics M74HC08 Table 6: DC specifications Symbol Parameter Test condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C VIH High-level input voltage 2.0 1.5 1.5 1.5 V 4.5 3.15 3.15 3.15 6.0 4.2 4.2 4.2 VIL Low-level input voltage 2.0 0.5 0.5 0.5 V 4.5 1.35 1.35 1.35 6.0 1.8 1.8 1.8 VOH High-level output voltage VOL Low-level output voltage II Input leakage current 6.0 VI = VCC or GND ±0.1 ±1 ±1 µA ICC Quiescent supply current

6.0 VI = VCC or

1 10 20 µA

Table 7: AC electrical characteristics (CL = 50 pF, input tr = tf = 6 ns) Symbol Parameter Test condition Value Unit TA = 25°C -40 to 85°C -55 to 125°C tTLH tTHL Output transition time 2.0 30 75 95 110 ns 4.5 8 15 19 22 6.0 7 13 16 19 tPLH tPHL Propagation delay time 2.0 24 75 95 110 ns 4.5 8 15 19 22 6.0 7 13 16 19 Table 8: Capacitive characteristics Symbol Parameter Test condition Value Unit TA = 25°C -40 to 85°C -55 to 125°C CIN Input capacitance 5.0 5 10 10 10 pF CPD Power dissipation capacitance(1) 5.0 19 pF Notes: (1)CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load (refer to the test circuit). The average operating current can be obtained by the following equation: ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate).

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Package information M74HC08

4.1 SO14 package information

Figure 5: Plastic SO14 package mechanical outline Table 9: Plastic SO14 package mechanical data Dimensions mm. inches A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 ° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S 8 ° (max.)

4.2 TSSOP14 package information

Figure 6: TSSOP14 package mechanical outline Table 10: TSSOP14 package mechanical data Dimensions mm. inches A 1.2 0.047 b 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.0089 e 0.65 BSC 0.0256 BSC K 0° 8° 0° 8°

5 Revision history

Jul-2001 1 Initial release 08-Oct-2013 2 Added ESD performance to Features Added automotive grade order codes, temperature ranges and marking information to Table 1 Removed DIP14 package option from datasheet Revised document presentation Minor textual updates