M1J DSK | Alldatasheet
Document overview
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Technical content
1.95± 0.25 4.3± 0.1 2.6± 0.15 2.35± 0.1 1.3± 0.2 0.203MAX 0.2± 0.05 5.6± 0.2 /i0
FEATURES
For surface mounted applications Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case: JEDEC SMAJ,molded plastic Terminals: Solder plated, solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode end Weight: 0.003 ounces, 0.084 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Maximum RMS voltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Maximum average forward rectified current @T L =110 I (AV) A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load TJ=125 Maximum instantaneous forward voltage at 1.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 I R µA Typical junction capacitance (Note1) C J pF Typical thermal resistance (Note2) R θJA Operating temperature range T J Storage temperature range T STG 2. Thermal resistance from junction to ambient 35 70 SURFACE MOUNT RECTIFIERS Easily cleaned with Alcohol,Isopropnol and similar solvents The plastic material carries U/L recognition 94V-0 Dimensions in millimeters 50 100 1.0 1.1 VOLTAGE RANGE : 50 ---- 1000V CURRENT: 1.0 A M1J M2J M3J M4J M5J M6J M7J SMAJ NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. I FSM A - 55 --- + 150 - 55 --- + 150 5.0 100 M1J---M7J Device marking M1 M2 M3 M4 M5 M6 M7 Diode Semiconductor Korea www.diode.kr
0.01 0.1 101 100 T J =25 C f=1.0MHZ Vsig=50mVp-p Puise Width=300 S 1%DUTY CYCLE 0.4 0.01 0.1 100 T J =25 C O T J =125 C O T J =75 C O T J =25 C O 100 0.1 0.01 0.001 800 20 40 60 100 AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT MICROAMPERES JUNCTION CAPACITANCE pF TRANSIENT THERMAL IMPEDANCE, NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.6-TRANSIENT THERMAL IMPEDANCE REVERSE VOLTAGE,VOLTS PULSE DURATON,SEC AMBIENT TEMPERATURE M1J--M7J FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT 1.0 0.8 0.6 0.4 0.2 Resistive or inductive Load 0.2X0.2(5.0X5.0mm) THICK COPPERPAND AREAS 1.2 20 40 60 80 100 120 140 160 100 10 100 T L =110 C 8.3ms Single Half Sine Wave (JEDEC Method) O 0.1 0.1 1 10 100 0.01 100 UNITS MOUNTED on INCHES(0.013mm) THICK COPPERLAND AREAS www.diode.kr Diode Semiconductor Korea