M54HC10_04 STMICROELECTRONICS | Alldatasheet

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I HIGH SPEED: tPD = 8ns (TYP .) at VCC =6 V I LOW POWER DISSIPATION: I CC =1 µA(MAX.) at TA=25°C I HIGH NOISE IMMUNITY: VNIH =V NIL = 28% VCC (MIN.) I SYMMETRICAL OUTPUT IMPEDANCE: OH |=IOL =4 m A( M I N ) I BALANCED PROPAGATION DELAYS: t PLH ≅ tPHL I WIDE OPERATING VOLTAGE RANGE: V CC (OPR) = 2V to 6V I PIN AND FUNCTION COMPATIBLE WITH

54 SERIES 10

I SPACE GRADE-1: ESA SCC QUALIFIED I 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST I NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION I DEVICE FULLY COMPLIANT WITH SCC-9201-107

DESCRIPTION

T h eM 5 4 H C 1 0i sa nh i g hs p e e dC M O ST R I P L E 3-INPUT NAND GATE fabricated with silicon gate C 2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. M54HC10 RAD-HARD TRIPLE 3-INPUT NAND GATE PIN CONNECTION ORDER CODES PACKAGE FM EM DILC M54HC10D M54HC10D1 FPC M54HC10K M54HC10K1 DILC-14 FPC-14

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION TRUTH TABLE X : Don‘t Care ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied PIN N° SYMBOL NAME AND FUNCTION 1, 3, 9 1A to 3A Data Inputs 2, 4, 10 1B to 3B Data Inputs 13, 5, 11 1C to 3C Data Inputs 12, 6, 8 1Y to 3Y Data Outputs

7 GND Ground (0V)

14 VCC Positive Supply Voltage

Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V VI DC Input Voltage -0.5 to V CC +0 . 5 V VO DC Output Voltage -0.5 to V CC +0 . 5 V IIK DC Input Diode Current ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ICC or IGND DC V CC or Ground Current ± 50 mA PD Power Dissipation 300 mW Tstg Storage Temperature -65 to +150 °C TL Lead Temperature (10 sec) 265 °C

RECOMMENDED OPERATING CONDITIONS DC SPECIFICATIONS Symbol Parameter Value Unit VCC Supply Voltage 2t o6 V VI Input Voltage 0 to V CC V VO Output Voltage 0 to V CC V Top Operating Temperature -55 to 125 °C tr,tf Input Rise and Fall Time V CC =2 . 0 V 0 to 1000 ns VCC =4 . 5 V 0 to 500 ns VCC =6 . 0 V 0 to 400 ns Symbol Parameter Test Condition Value UnitVCC (V) TA = 25°C -40 to 85°C -55 to 125°C VIH High Level Input Voltage 2.0 1.5 1.5 1.5 V4.5 3.15 3.15 3.15 6.0 4.2 4.2 4.2 VIL Low Level Input Voltage 2.0 0.5 0.5 0.5 V4.5 1.35 1.35 1.35 6.0 1.8 1.8 1.8 VOH High Level Output Voltage V VOL Low Level Output Voltage V II Input Leakage Current 6.0 VI=V CC or GND ± 0.1 ± 1 ± 1 µA ICC Quiescent Supply Current 6.0 VI=V CC or GND 11 0 2 0 µA

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr =tf=6 n s ) CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr)=C PD xV CC xfIN +ICC /3 (per gate) TEST CIRCUIT C L = 50pF or equivalent (includes jig and probe capacitance) R T =Z OUT of pulse generator (typically 50Ω ) Symbol Parameter Test Condition Value UnitVCC (V) TA = 25°C -40 to 85°C -55 to 125°C tTLH tTHL Output Transition Time 2.0 30 75 95 110 ns4.5 8 15 19 22 6.0 7 13 16 19 tPLH tPHL Propagation Delay Time 2.0 27 75 95 110 ns4.5 9 15 19 22 6.0 8 13 16 19 Symbol Parameter Test Condition Value UnitVCC (V) TA = 25°C -40 to 85°C -55 to 125°C C IN Input Capacitance 5.0 5 10 10 10 pF C PD Power Dissipation Capacitance (note 5.0 23 pF

WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)

DIM. mm. inch A 2.1 22.54 0.083 0.100 a1 3.00 3.70 0.118 0.146 e1 2.54 0.100 F 7.11 7.75 0.280 0.305 I 3.70 0.146 K 10.90 12.1 0.429 0.476 DILC-14 MECHANICAL DATA 0016173H

DIM. mm. inch C 1.49 1.95 0.059 0.077 F 1.27 0.050 H 6.0 0.236 L 18.75 22.0 0.738 0.866 M 0.38 0.015 N 4.31 0.170 FPC-14 MECHANICAL DATA 016029E 1 7 814 F G D H A B M N H C L E

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