M54HC09 STMICROELECTRONICS | Alldatasheet

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QUAD 2-INPUT AND GATE (OPEN DRAIN) B1R (Plastic Package) ORDER CODES : M54HC09F1R M74HC09M1R M74HC09B1R M74HC09C1R F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) PIN CONNECTIONS (top view) NC = No Internal Connecti on INPUT AND OUTPUT EQUIVALENT CIRCUIT .HIGH SPEED tPD = 6 ns (TYP.) AT VCC =5V .LOW POWER DISSIPATION ICC =1 µA (MAX.) AT TA =2 5°C .HIGH NOISE IMMUNITY VNIH =V NIL =2 8%V CC (MIN.) .OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

.SYMMETRICAL OUTPUT IMPEDANCE IOH  =IOL = 4 mA (MIN.) .BALANCED PROPAGATION DELAYS tPLH =tPHL .WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V .PIN AND FUNCTION COMPATIBLE WITH 54/74LS09 The M54/74HC09 is a high speed CMOS QUAD 2- INPUT OPEN DRAIN AND GATE fabricated in sili- con gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages includ- ing buffer output, which gives high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess volt- age.

DESCRIPTION

Z = HIGH IMPEDANCE PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 4, 9, 12 1A to 4A Data Inputs 2, 5, 10, 13 1B to 4B Data Inputs 3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V CC Positive Supply Voltage

Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V VI DC Input Voltage -0.5 to V CC + 0.5 V VO DC Output Voltage -0.5 to V CC + 0.5 V IIK DC Input Diode Current ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Sink Current Per Output Pin 25 mA ICC or IGND DC V CC or Ground Current ± 50 mA P D Power Dissipation 500 (*) mW Tstg Storage Temperature -65 to +150 oC TL Lead Temperature (10 sec) 300 oC Absolute MaximumRatings are those values beyond whichdamage tothe device may occu r. Functional operation under these condition isnotimplied. (*) 500 mW:≅ 65 oC derate to 300 mW by 10mW/oC: 65oCt o 8 5oC M54/M74HC09

RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage 2 to 6 V VI Input Voltage 0 to V CC V VO Output Voltage 0 to V CC V Top Operating Temperature:M54HC Series M74HC Series -55 to +125 -40 to +85 oC oC tr,tf Input Rise and Fall Time V CC = 2 V 0 to 1000 ns VCC = 4.5 V 0 to 500 VCC = 6 V 0 to 400 DC SPECIFICATIONS Symbol Parameter Test Conditions Value UnitVCC (V) TA =2 5oC 54HC and 74HC -40 to 85oC 74HC -55 to 125oC 54HC VIH High Level Input Voltage 2.0 1.5 1.5 1.5 V4.5 3.15 3.15 3.15 6.0 4.2 4.2 4.2 V IL Low Level Input Voltage 2.0 0.5 0.5 0.5 V4.5 1.35 1.35 1.35 6.0 1.8 1.8 1.8 VOL Low Level Output Voltage

2.0 VI =

IO =2 0µA 0.0 0.1 0.1 0.1 V II Input Leakage Current 6.0 VI =V CC or GND ±0.1 ±1 ±1 µA IOZ Output Leakage Current 6.0 VI =V IH or VIL VO =V CC or GND ±0.5 ±5 ±10 µA ICC Quiescent Supply Current

6.0 V I =V CC or GND 1 10 20 µA

AC ELECTRICAL CHARACTERISTICS (CL =5 0p F ,I n p u ttr =t f =6n s ) Symbol Parameter Test Conditions Value UnitVCC (V) TA =2 5oC 54HC and 74HC -40 to 85oC 74HC -55 to 125oC 54HC tTHL Output Transition Time 2.0 30 75 95 110 ns4 . 5 8 1 51 92 2 6 . 0 7 1 31 61 9 tPLZ Propagation Delay Time

2.0 R L =1K Ω 10 75 95 110

ns4 . 5 8 1 51 92 2 6 . 0 7 1 31 61 9 tPZL Propagation Delay Time

2.0 R L =1K Ω 20 75 95 110

ns4 . 5 8 1 51 92 2 6 . 0 7 1 31 61 9 C IN Input Capacitance 5 10 10 10 pF C OUT Output Capacitance 3 pF C PD (*) Power Dissipation Capacitance 5 pF (*) CPD is defined as the value of the IC’s internal equivalent capac itance which is calculated from the operating current consump tion without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC (opr) = CPD •VCC •fIN +ICC /4 (per Gate) SWITCHING CHARACTERISTICS TEST CIRCUIT INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICSTEST. TEST CIRCUIT ICC (Opr.) M54/M74HC09

Plastic DIP14 MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 P001A M54/M74HC09

Ceramic DIP14/1 MECHANICAL DATA DIM. mm inch A 20 0.787 B 7.0 0.276 D 3.3 0.130 E 0.38 0.015 e3 15.24 0.600 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 1.52 2.54 0.060 0.100 N 10.3 0.406 P 7.8 8.05 0.307 0.317 Q 5.08 0.200 P053C M54/M74HC09

DIM. mm inch A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 ° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S8 ° (max.) P013G M54/M74HC09

DIM. mm inch A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A M54/M74HC09

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A M54/M74HC09