M5480

M5480 STMICROELECTRONICS | Alldatasheet

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Technical content

.3 1/2 DIGIT LED DRIVER (23 segments) .CURRENT GENERATOR OUTPUTS (no re- sistors required) .CONTINUOUS BRIGHTNESS CONTROL .SERIAL DATA INPUT .NO LOAD SIGNAL REQUIRED .WIDE SUPPLY VOLTAGE OPERATION .TTL COMPATIBILITY Applications examples .MICROPROCESSOR DISPLAYS .INDUSTRIAL CONTROL INDICATION .RELAY DRIVER .INSTRUMENTATION READOUTS

DESCRIPTION

The M5480 is a monolithic MOS integrated circuit produced with a N-channel silicon gate technology. It utilizes the M5451 die packaged in a 28-pin plas-tic package making it ideal for a 3 1/2 digit dispaly. A single pin controls the LED dispaly bright- ness by setting a reference current through a vari- able resistor connected either to V DD o r t o a separate supply of 13.2V maximum. The M5480 is a pin-to-pin replacement of the NS MM 5480. DIP-28 (Plastic Package) ORDER CODE : M5480B7 OUTPUT BIT 11 OUTPUT BIT 1 OUTPUT BIT 2 OUTPUT BIT 3 OUTPUT BIT 4 OUTPUT BIT 5 OUTPUT BIT 6 OUTPUT BIT 7 OUTPUT BIT 8 OUTPUT BIT 9 OUTPUT BIT 10 BRIGHTNESS CONTROL V SS V DD OUTPUT BIT 12 OUTPUT BIT 13 OUTPUT BIT 14 OUTPUT BIT 15 OUTPUT BIT 16 OUTPUT BIT 17 OUTPUT BIT 18 OUTPUT BIT 19 OUTPUT BIT 20 OUTPUT BIT 21 OUTPUT BIT 22 OUTPUT BIT 23 DATA IN CLOCK IN 5480-01.EPS PIN CONNECTIONS

35 LATCHES

35 BIT SHIFT REGISTER

35 OUTPUT BUFERS

5480-02.EPS BLOCK DIAGRAM (Figure 1) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDD Supply Voltage – 0.3 to 15 V VI Input Voltage – 0.3 to 15 V VO (off) Off State Output Voltage 15 V IO Output Sink Current 40 mA Ptot Total Package Power Dissipation at 25 °C at 85 °C 940 490 mW mW Tj Junction Temperature 150 °C Toper Operating Temperature Range – 25, + 85 °C Tstg Storage Temperature Range – 65, + 150 °C Stresses in excess of those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions in excess of those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 5480-01.TBL M5480

300ns (min.) 5480-04.EPS Figure 3 There must be a complete set of 36 clocks or the shift registers will not clear. When power is first applied to the chip an internal power ON reset signal is generated which resets all registers and all latches. The START bit and the first clock return the chip to its normal operation. Figure 3 shows the timing relationships between Data, and Clock. A maximum clock frequency of 0.5MHz is assumed. Figure 4 shows the Output Data Format for the M5480. Because it uses only 23 of the possible 35 outputs, 12 of the bits are "Don’t Care". For applications where a lesser number of outputs are used, it is possible to either increase the current per output, or operate the part at higher than 1V V OUT . The following equation can be used for calcula- tions. Figure 4 : Serial Data Bus / Outputs Correspondance 5451 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 START

5480 X 23 22 21 20 19 X X 18 X 17 16 15 14 13 12 X START

5451 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 START

5480 X X X 11 10 9 8 X X X 7 6 5 4 3 2 1 X START

5480-03.TBL TYPICAL APPLICATION BASIC 3 1/2 Digit Interface.

23 SEGMENTS

5480-05.EPS V D V OUT R ID +VC 5480-06.EPS Tj = [ (VOUT ) (ILED ) (No.of segments) + VDD . 7 mA ] (132 °C/W) + Tamb where: Tj = junction temperature (150 °C max) VOUT = the voltage at the LED driver outputs ILED = the LED current 132 °C/W = thermal coefficient of the package Tamb = ambient temperature POWER DISSIPATION OF THE IC The power dissipation of the IC can be limited using different configurations. In this application R must be chosen taking into account the worst operating conditions. R is determined by the maximum number of seg- ments activated. R = VC − VD MAX − VOUT MIN N MAX ⋅ ID M5480

+V C 5480-07.EPS +VC V OUT +VD 5480-08.EPS The worst case condition for the device is when roughly half of the maximum number of segments are activated. It must be checked that the total power dissipation does not exceed the absolute maximum ratings of the device. In critical cases more resistors can be used in conjunction with groups of segments. In this case the current variation in the single resistor is reduced and Ptot limited. In this configuration the drop on the serial con- nected diodes is quite stable if the diodes are properly chosen. The total power dissipation of the IC depends, in a first approximation, only on the number of seg- ments activated. In this configuration VOUT + VD is constant. The total power dissipation of the IC depends only on the number of segments activated. M5480

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved Purchase of I2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. I L e D F E 11 4 b PM-DIP28.EPS PACKAGE MECHANICAL DATA

28 PINS - PLASTIC DIP

Dimensions Millimeters Inches a1 0.63 0.025 b 0.45 0.018 b1 0.23 0.31 0.009 0.012 b2 1.27 0.050 D 37.4 1.470 E 15.2 16.68 0.598 0.657 e 2.54 0.100 e3 33.02 1.300 F 14.1 0.555 i 4.445 0.175 L 3.3 0.130 DIP28.TBL M5480